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Chin. Phys. B, 2014, Vol. 23(4): 047805    DOI: 10.1088/1674-1056/23/4/047805

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol-gel method

Cao Meng-Meng, Zhao Xiao-Ru, Duan Li-Bing, Liu Jin-Ru, Guan Meng-Meng, Guo Wen-Rui
Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education of China and Department of Applied Physics, Northwestern Polytechnical University, Xi'an 710072, China
Abstract  Sb-doped ZnO thin films with different values of Sb content (from 0 to 1.1 at.%) are deposited by the sol-gel dip-coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy (UV-VIS) spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance (> 90%) in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence (PL) spectra revealed that the defect emission (around 450 nm) is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.
Keywords:  Sb-doped ZnO thin films      electrical and optical properties      sol concentrations      annealing ambient  
Received:  09 August 2013      Revised:  23 October 2013      Accepted manuscript online: 
PACS:  78.66.-w (Optical properties of specific thin films)  
  73.61.-r (Electrical properties of specific thin films) (Visible emission)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51172186), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20106102120051), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2013JQ6019).
Corresponding Authors:  Zhao Xiao-Ru     E-mail:
About author:  78.66.-w; 73.61.-r;

Cite this article: 

Cao Meng-Meng, Zhao Xiao-Ru, Duan Li-Bing, Liu Jin-Ru, Guan Meng-Meng, Guo Wen-Rui Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol-gel method 2014 Chin. Phys. B 23 047805

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