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Chin. Phys. B, 2014, Vol. 23(4): 047304    DOI: 10.1088/1674-1056/23/4/047304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

Ibrahim Yücedağa, Ahmet Kayab, Şemsettin Altındalc, Ibrahim Uslud
a Department of Computer Engineering, Technology Faculty, Duzce University, Duzce, Turkey;
b Department of Opticianry, Vocationel School of Medical Sciences, Turgut Ozal University, Ankara, Turkey;
c Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey;
d Department of Chemistry, Faculty of Science and Arts, Gazi University, Ankara, Turkey
Abstract  In order to investigate of cobalt-doped interfacial polyvinyl alcohol (PVA) layer and interface trap (Dit) effects, Al/p-Si Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of 30 kHz-300 kHz and-5 V-6 V, respectively. C-V or ε '-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance (Rs), and interfacial layer. Both the real and imaginary parts of dielectric constant (ε ' and ε") and electric modulus (M' and M"), loss tangent (tan δ), and AC electrical conductivity (σac) are investigated, each as a function of frequency and applied bias voltage. Each of the M' versus V and M" versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance (C) and conductance (G/w) values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si (MPS) type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance (CLF-CHF) method.
Keywords:  Al/Co-PVA/p-Si (MPS)      electrical and dielectric properties      AC electrical conductivity      frequency and voltage dependence  
Received:  25 June 2013      Revised:  26 August 2013      Published:  15 April 2014
PACS:  73.61.Ph (Polymers; organic compounds)  
  77.84.Nh (Liquids, emulsions, and suspensions; liquid crystals)  
  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  
  78.40.Me (Organic compounds and polymers)  
Corresponding Authors:  Ahmet Kaya     E-mail:  ahmetkaya0107@hotmail.com
About author:  73.61.Ph; 77.84.Nh; 78.20.Ci; 78.40.Me

Cite this article: 

Ibrahim Yücedağ, Ahmet Kaya, Şemsettin Altındal, Ibrahim Uslu Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature 2014 Chin. Phys. B 23 047304

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