Abstract This paper reports the current--voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes (RTDs) as a function of uniaxial external stress applied parallel to the [110] and the [1$\bar{1}$0] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [1$\bar{1}$0] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [1$\bar{1}$0] stresses and the linear sensitivities are up to 0.69mV/MPa, -0.69mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37mV/kPa.
Received: 24 August 2006
Revised: 25 October 2006
Accepted manuscript online:
PACS:
85.30.Mn
(Junction breakdown and tunneling devices (including resonance tunneling devices))
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 50405025 and 50375050).
Cite this article:
Wang Jian(王建), Zhang Wen-Dong(张文栋), Xue Chen-Yang(薛晨阳), Xiong Ji-Jun(熊继军), Liu Jun(刘俊), and Xie Bin(谢斌) Pressure effects in AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors 2007 Chinese Physics 16 1150
[1]
Structural stability and electrical properties of AlB2-type MnB2 under high pressure Meng Xiang-Xu (孟祥旭), Fan Jing (范靖), Bao Kuo (包括), Li Fang-Fei (李芳菲), Huang Xiao-Li (黄晓丽), Li Yan (李岩), Tian Fu-Bo (田夫波), Duan De-Fang (段德芳), Jin Xi-Lian (靳锡联), Zhu Pin-Wen (朱品文), He Zhi (何志), Zhou Qiang (周强), Gao Chun-Xiao (高春晓), Liu Bing-Bing (刘冰冰), Cui Tian (崔田). Chin. Phys. B, 2014, 23(1): 016102.
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