A full numerical calculation of the Franz--Keldysh effect on magnetoexcitons in a bulk semiconductor
Zhang Tong-Yi(张同意), Zhao Wei(赵卫), Zhu Hai-Yan(朱海燕), Zhu Shao-Lan(朱少岚), and Liu Xue-Ming(刘雪明)
State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710068, China
Abstract We have performed a full numerical calculation of the Franz--Keldysh (FK) effect on magnetoexcitons in a bulk GaAs semiconductor. By employing an initial value method in combination with the application of a perfect matched layer, the numerical effort and storage size are dramatically reduced due to a significant reduction in both computed domain and number of base functions. In the absence of an electric field, the higher magnetoexcitonic peaks show distinct Fano lineshape due to the degeneracy with continuum states of the lower Landau levels. The magnetoexcitons that belong to the zeroth Landau level remain in bound states and lead to Lorentzian lineshape, because they are not degenerated with continuum states. In the presence of an electric field, the FK effect on each magnetoexcitonic resonance can be identified for high magnetic fields. However, for low magnetic fields, the FK oscillations dominate the spectrum structure in the vicinity of the bandgap edge and the magnetoexcitonic resonances dominate the spectrum structure of higher energies. In the moderate electric fields, the interplay of FK effect and magnetoexcitonic resonance leads to a complex and rich structure in the absorption spectrum.
Received: 06 June 2005
Revised: 08 April 2006
Accepted manuscript online:
Fund: Project supported by the
Major Program of the National Natural Science Foundation of China (Grant
No 10390160), and\linebreak
\makebox[1.6mm]{}the National Natural Science Foundation of China (Grant
No 30370420).
Cite this article:
Zhang Tong-Yi(张同意), Zhao Wei(赵卫), Zhu Hai-Yan(朱海燕), Zhu Shao-Lan(朱少岚), and Liu Xue-Ming(刘雪明) A full numerical calculation of the Franz--Keldysh effect on magnetoexcitons in a bulk semiconductor 2006 Chinese Physics 15 2151
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