LINEAR TUNNELING CONDUCTANCE AND INELASTIC-TUNNELING MODEL
LIU MEI (刘楣)a, XING DING-YU (邢定钰)b, DONG JIN-MING (董锦明)b
a Department of Physics, Southeasterm University, Nanjing 210018, China; b Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210008, China
Abstract The inelastic-tunneling model can be used to explain the linear conductance background observed in tunneling in the high-Tc oxide super conductors. Introducing a parameter into the tunneling Hamiltanian to describe the strength of on-site Coulomb repulsion, we have derived an expression for the inelastic-tunneling conductance. We further discuss what form of the spin-fluctuation propagators in the inelastic-tunneling model can produce the linear tunneling conductance which would agree well with the experimental data.
Received: 14 January 1992
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China and the State Key Magnetism Laboratory, Institute of Physics, Academia Sinica, China.
Cite this article:
LIU MEI (刘楣), XING DING-YU (邢定钰), DONG JIN-MING (董锦明) LINEAR TUNNELING CONDUCTANCE AND INELASTIC-TUNNELING MODEL 1993 Acta Physica Sinica (Overseas Edition) 2 220
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