Formation of ZnGa2O4 films by multilayer deposition and subsequent thermal annealing*

Abstract

Abstract The Ga2O3/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness of Ga2O3 layer is varied in the range of 19-2.5nm and the thickness of ZnO layer is a constant of 1nm. Formation of spinel ZnGa2O4 films has been achieved via annealing of the Ga2O3/ZnO multilayer films. The influence of original Ga2O3 sublayer thickness on the optical and structural properties of Ga2O3/ZnO multilayer films and annealed films are studied. With a decrease in the thickness of Ga2O3 sublayers, Ga2O3/ZnO multilayer films show that the optical band-gap decreases, the intensity of the UV emission diminishes, the intensity of the violet emission is enhanced. The annealed films show that the optical band gap is enlarged, the violet emission is quenched, UV fluorescence band has been observed from Ga2O3 and ZnGa2O4.

Keywords: Multilayer films Optical band gap Optical transmittance Photoluminescence

Received: 26 August 2013
Published: 31 October 2013

Fund: the Planning Program of Leading Youth Scholars of Science and Technology of Yunnan Province of China

Corresponding Authors: Jin-Liang YAN

Cite this article:

. Formation of ZnGa2O4 films by multilayer deposition and subsequent thermal annealing*. Chin. Phys. B, , (): 0.

[1]	Lei Niu, Yimin Chen, Xiang Shen, Tiefeng Xu. Thermal stability of magnetron sputtering Ge-Ga-S films[J]. >Chin. Phys. B, 2020, 29(8): 087803.
[2]	Meng-Jiao Xu, Su-Xia Li, Chen-Chen Ji, Wan-Xia Luo, Lu-Xiang Wang. Energy transfer, luminescence properties, and thermal stability of color tunable barium pyrophosphate phosphors[J]. >Chin. Phys. B, 2020, 29(6): 063301.
[3]	Deepika, Raju Kumar, Ritesh Kumar, Kamdeo Prasad Yadav, Pratyush Vaibhav, Seema Sharma, Rakesh Kumar Singh, Santosh Kumar. Defect induced room-temperature ferromagnetism and enhanced photocatalytic activity in Ni-doped ZnO synthesized by electrodeposition[J]. >Chin. Phys. B, 2020, 29(10): 108503.
[4]	Han-Da Wang, De-Di Liu, Yang-Yang He, Hong-Sheng Jia, Ran Liu, Bo Liu, Nai-Sen Yu, Zhen-Yi Zhang. Photoluminescence changes of C₇₀ nanotubes induced by laser irradiation[J]. >Chin. Phys. B, 2020, 29(10): 104209.
[5]	Jia-Yao Huang, Lin Shang, Shu-Fang Ma, Bin Han, Guo-Dong Wei, Qing-Ming Liu, Xiao-Dong Hao, Heng-Sheng Shan, Bing-She Xu. Low temperature photoluminescence study of GaAs defect states[J]. >Chin. Phys. B, 2020, 29(1): 010703.
[6]	Jin-Huan Li, Dan Bing, Zhang-Ting Wu, Guo-Qing Wu, Jing Bai, Ru-Xia Du, Zheng-Qing Qi. Thickness-dependent excitonic properties of atomically thin 2H-MoTe₂[J]. >Chin. Phys. B, 2020, 29(1): 017802.
[7]	Hang-Cheng Zhang, Cheng-Ke Chen, Ying-Shuang Mei, Xiao Li, Mei-Yan Jiang, Xiao-Jun Hu. Micron-sized diamond particles containing Ge-V and Si-V color centers[J]. >Chin. Phys. B, 2019, 28(7): 076103.
[8]	Xin Zhang, Li-Ping Shao, Man Peng, Zhong-Chen Bai, Zheng-Ping Zhang, Shui-Jie Qin. Fluorescence spectra of colloidal self-assembled CdSe nano-wire on substrate of porous Al₂O₃/Au nanoparticles[J]. >Chin. Phys. B, 2019, 28(6): 068103.
[9]	Ding Yu, Guiying Shen, Hui Xie, Jingming Liu, Jing Sun, Youwen Zhao. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal[J]. >Chin. Phys. B, 2019, 28(5): 057102.
[10]	Chang-Fu Li, Kai-Ju Shi, Ming-Sheng Xu, Xian-Gang Xu, Zi-Wu Ji. Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells[J]. >Chin. Phys. B, 2019, 28(10): 107803.
[11]	Ying-Shuang Mei, Cheng-Ke Chen, Mei-Yan Jiang, Xiao Li, Yin-Lan Ruan, Xiao-Jun Hu. Photoluminescence of SiV centers in CVD diamond particles with specific crystallographic planes[J]. >Chin. Phys. B, 2019, 28(1): 016101.
[12]	Shi-Yi Zhuo, Xue-Chao Liu, Wei Huang, Hai-Kuan Kong, Jun Xin, Er-Wei Shi. Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants[J]. >Chin. Phys. B, 2019, 28(1): 017101.
[13]	Tingting Yin, Liyong Jiang, Zexiang Shen. Recent progress on photoluminescence from plasmonic nanostructures: Phenomenon, mechanism, and application[J]. >Chin. Phys. B, 2018, 27(9): 097803.
[14]	Hong-Bo Zhang, Qing-Li Zhang, Xing Wang, Gui-Hua Sun, Xiao-Fei Wang, De-Ming Zhang, Dun-Lu Sun. Transition intensity calculation of Yb: YAG[J]. >Chin. Phys. B, 2018, 27(6): 067801.
[15]	Xue Li, Da-Wei He, Yong-Sheng Wang, Yin Hu, Xuan Zhao, Chen Fu, Jing-Yan Wu. Facile and controllable synthesis of molybdenum disulfide quantum dots for highly sensitive and selective sensing of copper ions[J]. >Chin. Phys. B, 2018, 27(5): 056104.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Shared

Discussed