Abstract A new tunnel recombination junction is fabricated for n—i—p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p+ recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n—i—p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 Ω·cm2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage Voc= 1.4 V, which is nearly the sum of the Vocs of the two corresponding single cells, indicating no Voc losses at the tunnel recombination junction.
Yao Wen-Jie(姚文杰), Zeng Xiang-Bo(曾湘波), Peng Wen-Bo(彭文博), Liu Shi-Yong(刘石勇), Xie Xiao-Bing(谢小兵), Wang Chao(王超), and Liao Xian-Bo(廖显伯) The p recombination layer in tunnel junctions for micromorph tandem solar cells 2011 Chin. Phys. B 20 078402
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