Abstract The conduction mechanism of stress induced leakage current (SILC) through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress (CVS). The simulation results show that the SILC is formed by trap-assisted tunnelling (TAT) process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.
Received: 18 March 2005
Revised: 13 April 2005
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the Special Foundation for State Major Basic Research Program of China (Grant No
TG2000-036503).
Cite this article:
Wang Yan-Gang (王彦刚), Xu Ming-Zhen (许铭真), Tan Chang-Hua (谭长华), Zhang J.F., Duan Xiao-Rong (段小蓉) The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses 2005 Chinese Physics 14 1886
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
