Abstract In this paper, we study effects of temperature and electron effective mass within the barrier on the bias dependence and sign-change behavior of the tunneling magnetoresistance (TMR) in ferromagnetic junctions. A significant decrease of the tunneling magnetoresistance with elevating temperature is obtained, in accordance with experiments. In addition to the height of barrier potential $(\phi)$ discussed in our previous papers, the electron effective mass $(m_{\rm B})$ within the barrier region is found to be another important factor that physically controls the sign-change behavior of the TMR. The critical voltage ($V_{\rm c}$) at which TMR changes sign will increase with $\phi$ and decrease with $m_{\rm B}$, respectively. Furthermore, both the zero-bias TMR and $V_{\rm c}$ will decrease if temperature rises. These results are hoped to be of practical use for experimental investigations.
Received: 01 November 2004
Revised: 14 December 2004
Accepted manuscript online:
Li Fei-Fei (李飞飞), Li Zheng-Zhong (李正中), Xiao Ming-Wen (肖明文) Effects of temperature and electron effective mass on bias-dependent tunnelling magnetoresistance 2005 Chinese Physics 14 1025
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