中国物理B ›› 2008, Vol. 17 ›› Issue (12): 4619-4621.doi: 10.1088/1674-1056/17/12/047

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Relations between compositional modulation and atomic ordering degree in thin films of ternary III—V semiconductor alloys

邹超1, 张丽平2, 梁家昌2, 刘焕礼2, 刘冶2, 乐小云3, 郑震4   

  1. (1)China Electronic Standardization Institute, Beijing 100007, China; (2)College of Science, Civil Aviation University of China, Tianjin 300300, China; (3)Department of Physics, Beijing University of Aeronautics & Astronautics, Beijing 100083, China; (4)Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518067, China
  • 收稿日期:2008-04-15 修回日期:2008-05-13 出版日期:2008-12-20 发布日期:2008-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60572177) and by CAUC Foundation (Grant No 05yk27s).

Relations between compositional modulation and atomic ordering degree in thin films of ternary III—V semiconductor alloys

Zhang Li-Ping (张丽平)a, Zheng Zhen (郑震)b, Liang Jia-Chang (梁家昌)a,  Le Xiao-Yun(乐小云)c, Zou Chao (邹超)d, Liu Huan-Li (刘焕礼)a, Liu Ye (刘冶)a   

  1. a College of Science, Civil Aviation University of China, Tianjin 300300, China; b Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518067, China; c Department of Physics, Beijing University of Aeronautics & Astronautics, Beijing 100083, China; d China Electronic Standardization Institute, Beijing 100007, China
  • Received:2008-04-15 Revised:2008-05-13 Online:2008-12-20 Published:2008-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60572177) and by CAUC Foundation (Grant No 05yk27s).

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摘要： This paper derives the expressions for the ordering degree and the modulation factor of A and B atoms in AxB1-xC epilayers of ternary III--V semiconductor alloys. Using these expressions, it identifies quantitatively the alternating atom-enhanced planes, compositional modulations, atomic ordering degree on the group-III sublattices and the fine structure of NMR spectra.

关键词: atomic ordering degree, enhanced factor, ternary III--V semiconductor alloy, thin film

Abstract: This paper derives the expressions for the ordering degree and the modulation factor of A and B atoms in AxB1-xC epilayers of ternary III--V semiconductor alloys. Using these expressions, it identifies quantitatively the alternating atom-enhanced planes, compositional modulations, atomic ordering degree on the group-III sublattices and the fine structure of NMR spectra.

Key words: atomic ordering degree, enhanced factor, ternary III--V semiconductor alloy, thin film

中图分类号:  (Composition and phase identification)

  • 68.55.Nq
68.55.-a (Thin film structure and morphology) 76.60.-k (Nuclear magnetic resonance and relaxation)