中国物理B ›› 2008, Vol. 17 ›› Issue (12): 4622-4626.doi: 10.1088/1674-1056/17/12/048

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A new physics-based self-heating effect model for 4H-SiC MESFETs

曹全君, 张义门, 张玉明   

  1. Key Lab of Education Ministry for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2007-11-12 修回日期:2008-07-17 出版日期:2008-12-20 发布日期:2008-12-20
  • 基金资助:
    Project supported by the National Defense Foundation of China (Grant No 51327010101) and the National Natural Science Foundation of China (Grant No 60606022).

A new physics-based self-heating effect model for 4H-SiC MESFETs

Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)   

  1. Key Lab of Education Ministry for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2007-11-12 Revised:2008-07-17 Online:2008-12-20 Published:2008-12-20
  • Supported by:
    Project supported by the National Defense Foundation of China (Grant No 51327010101) and the National Natural Science Foundation of China (Grant No 60606022).

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摘要： A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and in-complete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I-V curves with the self-heating effect is obtained.

关键词: 4H silicon carbide, metal semiconductor field effect transistor, self-heating effect, computer aided design

Abstract: A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and in-complete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I-V curves with the self-heating effect is obtained.

Key words: 4H silicon carbide, metal semiconductor field effect transistor, self-heating effect, computer aided design

中图分类号:  (Field effect devices)

  • 85.30.Tv
72.20.Fr (Low-field transport and mobility; piezoresistance) 72.80.Jc (Other crystalline inorganic semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling)