中国物理B ›› 2008, Vol. 17 ›› Issue (12): 4622-4626.doi: 10.1088/1674-1056/17/12/048
曹全君, 张义门, 张玉明
Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)
摘要: A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and in-complete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I-V curves with the self-heating effect is obtained.
中图分类号: (Field effect devices)