中国物理B ›› 2008, Vol. 17 ›› Issue (12): 4648-4651.doi: 10.1088/1674-1056/17/12/053

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Study of (Ga, Mn)N prepared by Mn-Ion implantation using optical techniques

徐大庆, 张义门, 张玉明, 李培咸, 王超, 吕红亮, 汤晓燕, 王悦湖   

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2008-05-16 修回日期:2008-06-05 出版日期:2008-12-20 发布日期:2008-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 90407014).

Study of (Ga, Mn)N prepared by Mn-Ion implantation using optical techniques

Xu Da-Qing (徐大庆), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Li Pei-Xian (李培咸), Wang Chao (王超), Lü Hong-Liang (吕红亮), Tang Xiao-Yan (汤晓燕), Wang Yue-Hu (王悦湖)   

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2008-05-16 Revised:2008-06-05 Online:2008-12-20 Published:2008-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 90407014).

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摘要： This paper reports that (Ga, Mn)N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraction(XRD). Detailed XRD measurements have revealed the characteristic of Mn-Ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747, 733 and 566\,cm-1 identified as E-1(LO), $A1(LO) and E2H, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650--725, 363, 506cm-1 and the vicinity of $E2H mode. The modes observed at 182, 288, 650--725\,cm-1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mnx-Ny, Gax-Mny modes and the local vibrational mode of Mn atoms in the (Ga, Mn)N, which are in fair agreement with the standard theoretical results.

关键词: Mn-Ion implantation GaN, diluted magnetic semiconductors, Raman spectroscopy, x-ray diffraction

Abstract: This paper reports that (Ga, Mn)N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraction(XRD). Detailed XRD measurements have revealed the characteristic of Mn-Ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747, 733 and 566 cm-1 identified as E1(LO), A1(LO) and E2H, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650--725, 363, 506cm-1 and the vicinity of E2H mode. The modes observed at 182, 288, 650--725 cm-1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mnx-Ny, Gax-Mny modes and the local vibrational mode of Mn atoms in the (Ga, Mn)N, which are in fair agreement with the standard theoretical results.

Key words: Mn-Ion implantation GaN, diluted magnetic semiconductors, Raman spectroscopy, x-ray diffraction

中图分类号:  (III-V and II-VI semiconductors)

  • 61.72.uj
61.05.cp (X-ray diffraction) 68.55.-a (Thin film structure and morphology) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 75.50.Pp (Magnetic semiconductors) 78.30.Fs (III-V and II-VI semiconductors)