中国物理B ›› 2008, Vol. 17 ›› Issue (12): 4648-4651.doi: 10.1088/1674-1056/17/12/053
徐大庆, 张义门, 张玉明, 李培咸, 王超, 吕红亮, 汤晓燕, 王悦湖
Xu Da-Qing (徐大庆), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Li Pei-Xian (李培咸), Wang Chao (王超), Lü Hong-Liang (吕红亮), Tang Xiao-Yan (汤晓燕), Wang Yue-Hu (王悦湖)
摘要: This paper reports that (Ga, Mn)N is prepared using implantation of 3at.% Mn Ions into undoped GaN. Structural characterization of the crystals was performed using x-ray diffraction(XRD). Detailed XRD measurements have revealed the characteristic of Mn-Ion implanted GaN with a small contribution of other compounds. With Raman spectroscopy measurements, the spectra corresponding to the intrinsic GaN layers demonstrate three Raman active excitations at 747, 733 and 566\,cm-1 identified as E-1(LO), $A1(LO) and E2H, respectively. The Mn-doped GaN layers exhibit additional excitations at 182, 288, 650--725, 363, 506cm-1 and the vicinity of $E2H mode. The modes observed at 182, 288, 650--725\,cm-1 are assigned to macroscopic disorder or vacancy-related defects caused by Mn-ion implantation. Other new phonon modes are assigned to Mnx-Ny, Gax-Mny modes and the local vibrational mode of Mn atoms in the (Ga, Mn)N, which are in fair agreement with the standard theoretical results.
中图分类号: (III-V and II-VI semiconductors)