中国物理B ›› 2008, Vol. 17 ›› Issue (12): 4606-4613.doi: 10.1088/1674-1056/17/12/045

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Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn1－xdx Se strained heterojunction

白鲜萍, 班士良   

  1. Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
  • 收稿日期:2008-05-12 修回日期:2008-05-21 出版日期:2008-12-20 发布日期:2008-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation (Grant No 60566002) and the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No 20070126001) of China.

Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn1-xCdx Se strained heterojunction

Bai Xian-Ping (白鲜萍), Ban Shi-Liang (班士良)   

  1. Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
  • Received:2008-05-12 Revised:2008-05-21 Online:2008-12-20 Published:2008-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation (Grant No 60566002) and the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No 20070126001) of China.

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摘要： With a memory function approach, this paper investigates the electronic mobility parallel to the interface in a ZnSe/Zn1－xdx Se strained heterojunction under hydrostatic pressure by considering the intersubband and intrasubband scattering from the optical phonon modes. A triangular potential approximation is adopted to simplify the potential of the conduction band bending in the channel side and the electronic penetrating into the barrier is considered by a finite interface potential in the adopted model. The numerical results with and without strain effect are compared and analyzed. Meanwhile, the properties of electronic mobility under pressure versus temperature, Cd concentration and electronic density are also given and discussed, respectively. It shows that the strain effect lowers the mobility of electrons while the hydrostatic pressure effect is more obvious to decrease the mobility. The contribution induced by the longitudinal optical phonons in the channel side is dominant to decide the mobility. Compared with the intrasubband scattering it finds that the effect of intersubband scattering is also important for the studied material.

关键词: electron mobility, ZnSe/Zn1－xdx Se , strain, pressure effect

Abstract: With a memory function approach, this paper investigates the electronic mobility parallel to the interface in a ZnSe/Zn1－xCdx Se strained heterojunction under hydrostatic pressure by considering the intersubband and intrasubband scattering from the optical phonon modes. A triangular potential approximation is adopted to simplify the potential of the conduction band bending in the channel side and the electronic penetrating into the barrier is considered by a finite interface potential in the adopted model. The numerical results with and without strain effect are compared and analyzed. Meanwhile, the properties of electronic mobility under pressure versus temperature, Cd concentration and electronic density are also given and discussed, respectively. It shows that the strain effect lowers the mobility of electrons while the hydrostatic pressure effect is more obvious to decrease the mobility. The contribution induced by the longitudinal optical phonons in the channel side is dominant to decide the mobility. Compared with the intrasubband scattering it finds that the effect of intersubband scattering is also important for the studied material.

Key words: electron mobility, ZnSe/Zn1-xCdx Se , strain, pressure effect

中图分类号:  (Low-field transport and mobility; piezoresistance)

  • 73.50.Dn
62.50.-p (High-pressure effects in solids and liquids) 71.38.-k (Polarons and electron-phonon interactions) 72.10.Di (Scattering by phonons, magnons, and other nonlocalized excitations) 73.20.At (Surface states, band structure, electron density of states) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)