中国物理B ›› 2008, Vol. 17 ›› Issue (12): 4645-4647.doi: 10.1088/1674-1056/17/12/052

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Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53a0.47s/InAs resonant tunneling diodes on quantum well widths

张杨1, 曾一平1, 张予2   

  1. (1)Novel Materials laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)The Internship Center for Business and Law, Beijing Technology and Business University, Beijing 102488, China
  • 收稿日期:2008-03-13 修回日期:2008-04-28 出版日期:2008-12-20 发布日期:2008-12-20

Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes on quantum well widths

Zhang Yang (张杨)a, Zhang Yu (张予)b,  Zeng Yi-Ping (曾一平)a   

  1. a Novel Materials laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b The Internship Center for Business and Law, Beijing Technology and Business University, Beijing 102488, China
  • Received:2008-03-13 Revised:2008-04-28 Online:2008-12-20 Published:2008-12-20

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摘要： This paper studies the dependence of I-V characteristics on quantum well widths in AlAs/In0.53Ga0.47As and AlAs/In0.53Ga0.47As/InAs resonant tunneling structures grown on InP substrates. It shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. The measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunneling diodes are continually decreasing with increasing well width.

关键词: resonant tunneling diode, molecular beam epitaxy

Abstract: This paper studies the dependence of I-V characteristics on quantum well widths in AlAs/In0.53Ga0.47As and AlAs/In0.53Ga0.47As/InAs resonant tunneling structures grown on InP substrates. It shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. The measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunneling diodes are continually decreasing with increasing well width.

Key words: resonant tunneling diode, molecular beam epitaxy

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.40.Gk (Tunneling) 73.63.Hs (Quantum wells) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))