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A study on the electrical property of HgSe under high pressure
郝爱民, 高春晓, 李明, 贺春元, 黄晓伟, 张东梅, 于翠玲, 关瑞, 邹广田
2007 (7):
2087-2090.
doi: 10.1088/1009-1963/16/7/047
摘要
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Using a microcircuit fabricated on a diamond anvil cell, we have measured
in-situ conductivity of HgSe under high pressures, and investigated the
temperature dependence of conductivity under several different pressures. The result
shows that HgSe has a pressure-induced transition sequence from a semimetal
to a semiconductor to a metal, similar to that in HgTe. Several
discontinuous changes in conductivity are observed at around 1.5, 17, 29
and 49GPa, corresponding to the phase transitions from zinc-blende to
cinnabar to rocksalt to orthorhombic to an unknown structure, respectively.
In comparison with HgTe, it is speculated that the unknown structure may be
a distorted CsCl structure. For the cinnabar-HgSe, the energy gap as a
function of pressure is obtained according to the temperature dependence of
conductivity. The plot of the temperature dependence of conductivity
indicates that the unknown structure of HgSe has an electrical property of a
conductor.
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