中国物理B ›› 2007, Vol. 16 ›› Issue (7): 2120-2122.doi: 10.1088/1009-1963/16/7/054

• • 上一篇    下一篇

Photoresponse of the In0.3 Ga0.7 N metal--insulator--semiconductor photodetectors

周建军, 文博, 江若琏, 刘成祥, 姬小利, 谢自力, 陈敦军, 韩平, 张荣, 郑有炓   

  1. Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics,Nanjing University, Nanjing 210093, China
  • 收稿日期:2006-10-18 修回日期:2006-11-24 出版日期:2007-07-20 发布日期:2007-07-04
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No~2006CB6049), the National Natural Science Foundation of China (Grant No~60476030), and the Natural Science Foundation of Jiangsu Province of China (Grant No~BK2

Photoresponse of the In0.3Ga0.7 N metal--insulator--semiconductor photodetectors

Zhou Jian-Jun(周建军)†, Wen Bo(文博), Jiang Ruo-Lian(江若琏), Liu Cheng-Xiang(刘成祥), Ji Xiao-Li(姬小利), Xie Zi-Li(谢自力), Chen Dun-Jun(陈敦军), Han Ping(韩平), Zhang Rong(张荣), and Zheng You-Dou(郑有炓)   

  1. Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics,Nanjing University, Nanjing 210093, China
  • Received:2006-10-18 Revised:2006-11-24 Online:2007-07-20 Published:2007-07-04
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No~2006CB6049), the National Natural Science Foundation of China (Grant No~60476030), and the Natural Science Foundation of Jiangsu Province of China (Grant No~BK2

PDF (PC)

629

赞

摘要： In0.3 Ga0.7N metal--insulator--semiconductor (MIS) and metal--semiconductor (MS) surface barrier photodetectors have been fabricated. The In0.3 Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The photoresponse and reverse current--voltage characteristics of the In0.3 Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450~nm is obtained for the In0.3 Ga0.7N MIS photodetector with 10~nm Si3N4 insulator layer, which is more than ten times higher than the In0.3 Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.

关键词: InGaN, photodetector, metal--insulator--semiconductor structure

Abstract: In0.3Ga0.7N metal--insulator--semiconductor (MIS) and metal--semiconductor (MS) surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The photoresponse and reverse current--voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.

Key words: InGaN, photodetector, metal--insulator--semiconductor structure

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Hi (Surface barrier, boundary, and point contact devices)