中国物理B ›› 2007, Vol. 16 ›› Issue (7): 2142-2147.doi: 10.1088/1009-1963/16/7/058

• • 上一篇    

Research on CeO2 cap layer for YBCO-coated conductor

石东奇1, KoRock-Kil2, KimHo-Sup2, ChungJun-Ki2, SongKyu-Jeongc2, ParkChan3, 马平4   

  1. (1)Institute for Superconducting and Electronic Materials, University of Wollongong, Australia; (2)Korea Electrotechnology Research Institute, Changwon,Kyungnam,Korea; (3)School of Materials Science {& Engineering, College of Engineering, Seoul National University, Seoul 151-744, Korea; (4)State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2006-10-10 修回日期:2007-01-31 出版日期:2007-07-20 发布日期:2007-07-04
  • 基金资助:
    Project supported by the 21st Century Frontier R{\&}D Program of the Center for Applied Superconductivity Technology, funded by the Ministry of Science and Technology, Republic of Korea.

Research on CeO2 cap layer for YBCO-coated conductor

Shi Dong-Qi(石东奇)a), Ma Ping(马平)b), Ko Rock-Kilc), Kim Ho-Supc), Chung Jun-Kic), Song Kyu-Jeongc), and Park Chand)   

  1. a Institute for Superconducting and Electronic Materials, University of Wollongong, Australia; b State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, Chinac Korea Electrotechnology Research Institute, Changwon, Kyungnam, Korea; d School of Materials Science & Engineering, College of Engineering, Seoul National University, Seoul 151-744, Korea
  • Received:2006-10-10 Revised:2007-01-31 Online:2007-07-20 Published:2007-07-04
  • Supported by:
    Project supported by the 21st Century Frontier R{\&}D Program of the Center for Applied Superconductivity Technology, funded by the Ministry of Science and Technology, Republic of Korea.

摘要: Two groups of coated conductor samples with different thicknesses of CeO2 cap layers deposited by pulsed laser deposition (PLD) under the same conditions have been studied. Of them, one group is of CeO2 films, which are deposited on stainless steel (SS) tapes coated by IBAD-YSZ (IBAD-YSZ/SS), and the other group is of CeO2/YSZ/Y2O3 multi-layers, which are deposited on NiW substrates by PLD for the fabrication of YBCO-coated conductor through the RABiTS approach. YBCO film is then deposited on the tops of both types of buffer layers by PLD. The effects of the thickness of the CeO$_{2}$ film on the texture of the CeO2 film and the critical current density (Jc) of the YBCO film are analysed. For the case of CeO2 film on IBAD-YSZ/SS, there appears a self-epitaxy effect with increasing thickness of the CeO2 film. For CeO2/YSZ/Y2O3/NiW, in which the buffer layers are deposited by PLD, there occurs no self-epitaxy effect, and the optimal thickness of CeO2 is about 50nm. The surface morphologies of the two groups of samples are examined by SEM.

关键词: coated conductor, buffer layer, self-epitaxy, CeO2

Abstract: Two groups of coated conductor samples with different thicknesses of CeO2 cap layers deposited by pulsed laser deposition (PLD) under the same conditions have been studied. Of them, one group is of CeO2 films, which are deposited on stainless steel (SS) tapes coated by IBAD-YSZ (IBAD-YSZ/SS), and the other group is of CeO2/YSZ/Y2O3 multi-layers, which are deposited on NiW substrates by PLD for the fabrication of YBCO-coated conductor through the RABiTS approach. YBCO film is then deposited on the tops of both types of buffer layers by PLD. The effects of the thickness of the CeO$_{2}$ film on the texture of the CeO2 film and the critical current density (Jc) of the YBCO film are analysed. For the case of CeO2 film on IBAD-YSZ/SS, there appears a self-epitaxy effect with increasing thickness of the CeO2 film. For CeO2/YSZ/Y2O3/NiW, in which the buffer layers are deposited by PLD, there occurs no self-epitaxy effect, and the optimal thickness of CeO2 is about 50nm. The surface morphologies of the two groups of samples are examined by SEM.

Key words: coated conductor, buffer layer, self-epitaxy, CeO2

中图分类号:  (Pulsed laser ablation deposition)

  • 81.15.Fg
74.25.Sv (Critical currents) 74.78.Fk (Multilayers, superlattices, heterostructures)