中国物理B ›› 2007, Vol. 16 ›› Issue (7): 2011-2014.doi: 10.1088/1009-1963/16/7/034

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A photonic crystal waveguide with silicon on insulator in the near-infrared band

唐海侠, 左玉华, 余金中, 王启明   

  1. State Key Joint Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2006-12-14 修回日期:2007-01-09 出版日期:2007-07-20 发布日期:2007-07-04
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60336010 and 60537010).

A photonic crystal waveguide with silicon on insulator in the near-infrared band

Tang Hai-Xia(唐海侠)†, Zuo Yu-Hua(左玉华), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明)   

  1. State Key Joint Laboratory of Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • Received:2006-12-14 Revised:2007-01-09 Online:2007-07-20 Published:2007-07-04
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60336010 and 60537010).

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摘要： A two-dimensional (2D) photonic crystal waveguide in the \Gamma--K direction with triangular lattice on a silicon-on-insulator (SOI) substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion (PWE) methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590\,nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630\,nm, which can be considered as due to the unpolarized source used in the transmission measurement.

关键词: photonic bandgap, photonic crystal waveguide, SOI

Abstract: A two-dimensional (2D) photonic crystal waveguide in the $\varGamma$--$K$ direction with triangular lattice on a silicon-on-insulator (SOI) substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion (PWE) methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590 nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630 nm, which can be considered as due to the unpolarized source used in the transmission measurement.

Key words: photonic bandgap, photonic crystal waveguide, SOI

中图分类号:  (Waveguides, couplers, and arrays)

  • 42.82.Et
42.70.Qs (Photonic bandgap materials) 42.82.Bq (Design and performance testing of integrated-optical systems) 42.82.Cr (Fabrication techniques; lithography, pattern transfer)