中国物理B ›› 2007, Vol. 16 ›› Issue (7): 2087-2090.doi: 10.1088/1009-1963/16/7/047

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A study on the electrical property of HgSe under high pressure

高春晓1, 李明1, 贺春元1, 黄晓伟1, 张东梅1, 于翠玲1, 关瑞1, 邹广田1, 郝爱民2   

  1. (1)State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China; (2)State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China ;Department of Mathematics and Physics, Hebei Normal University of Science {& Technology, Qinhuangdao 066004, China
  • 收稿日期:2006-08-10 修回日期:2006-09-18 出版日期:2007-07-20 发布日期:2007-07-04
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos~40473034, 40404007, 10574055 and 50532020) and by the State Key Development Program for Basic Research of China (Grant No~2005CB724404).

A study on the electrical property of HgSe under high pressure

Hao Ai-Min(郝爱民)a)b), Gao Chun-Xiao(高春晓)a)† , Li Ming(李明)a), He Chun-Yuan(贺春元)a), Huang Xiao-Wei(黄晓伟)a), Zhang Dong-Mei(张东梅)a), Yu Cui-Ling(于翠玲)a), Guan Rui(关瑞)a), and Zou Guang-Tian(邹广田)a)   

  1. a State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China; b Department of Mathematics and Physics, Hebei Normal University of Science & Technology, Qinhuangdao 066004, China
  • Received:2006-08-10 Revised:2006-09-18 Online:2007-07-20 Published:2007-07-04
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos~40473034, 40404007, 10574055 and 50532020) and by the State Key Development Program for Basic Research of China (Grant No~2005CB724404).

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摘要： Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressures. The result shows that HgSe has a pressure-induced transition sequence from a semimetal to a semiconductor to a metal, similar to that in HgTe. Several discontinuous changes in conductivity are observed at around 1.5, 17, 29 and 49GPa, corresponding to the phase transitions from zinc-blende to cinnabar to rocksalt to orthorhombic to an unknown structure, respectively. In comparison with HgTe, it is speculated that the unknown structure may be a distorted CsCl structure. For the cinnabar-HgSe, the energy gap as a function of pressure is obtained according to the temperature dependence of conductivity. The plot of the temperature dependence of conductivity indicates that the unknown structure of HgSe has an electrical property of a conductor.

关键词: in-situ conductivity measurement, phase transition, high pressure

Abstract: Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressures. The result shows that HgSe has a pressure-induced transition sequence from a semimetal to a semiconductor to a metal, similar to that in HgTe. Several discontinuous changes in conductivity are observed at around 1.5, 17, 29 and 49GPa, corresponding to the phase transitions from zinc-blende to cinnabar to rocksalt to orthorhombic to an unknown structure, respectively. In comparison with HgTe, it is speculated that the unknown structure may be a distorted CsCl structure. For the cinnabar-HgSe, the energy gap as a function of pressure is obtained according to the temperature dependence of conductivity. The plot of the temperature dependence of conductivity indicates that the unknown structure of HgSe has an electrical property of a conductor.

Key words: in-situ conductivity measurement, phase transition, high pressure

中图分类号:  (Conductivity phenomena in semiconductors and insulators)

  • 72.20.-i
62.50.-p (High-pressure effects in solids and liquids) 71.20.Nr (Semiconductor compounds) 72.60.+g (Mixed conductivity and conductivity transitions) 72.80.Ey (III-V and II-VI semiconductors)