中国物理B ›› 2025, Vol. 34 ›› Issue (7): 77201-077201.doi: 10.1088/1674-1056/adcc86

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CMOS compatibility and excellent resistive switching of tantalum oxide-based resistive switching memory

Liping Fu(傅丽萍), Gaoyuan Pan(潘高远), Rui Hao(郝瑞), Xiaolong Fan(范小龙), and Yingtao Li(李颖弢)†   

  1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  • 收稿日期:2025-02-12 修回日期:2025-03-07 接受日期:2025-04-15 出版日期:2025-06-18 发布日期:2025-07-03
  • 通讯作者: Yingtao Li E-mail:ytli@lzu.edu.cn
  • 基金资助:
    Project supported by the Key Research and Development Program of Gansu Province - Industrial Project (Grant No. 25YFGA005).

CMOS compatibility and excellent resistive switching of tantalum oxide-based resistive switching memory

Liping Fu(傅丽萍), Gaoyuan Pan(潘高远), Rui Hao(郝瑞), Xiaolong Fan(范小龙), and Yingtao Li(李颖弢)†   

  1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  • Received:2025-02-12 Revised:2025-03-07 Accepted:2025-04-15 Online:2025-06-18 Published:2025-07-03
  • Contact: Yingtao Li E-mail:ytli@lzu.edu.cn
  • Supported by:
    Project supported by the Key Research and Development Program of Gansu Province - Industrial Project (Grant No. 25YFGA005).

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摘要： A CMOS compatible RRAM device with TaN/Ta/TaO$_{x}$/TaN structure was proposed for nonvolatile memory applications. Excellent resistive switching characteristics, including low operation voltages ($< 1$ V), low operation current (< 100 μA), good programming/erasing endurance ($> 10^{6}$ cycles), satisfactory uniformity, and reliable data retention, have been demonstrated. Furthermore, all of the elements in the fabricated TaN/Ta/TaO$_{x}$/TaN devices are highly compatible with modern CMOS manufacturing process, showing promising application in the next generation of nonvolatile memory.

关键词: resistive switching, tantalum oxide, CMOS compatibility

Abstract: A CMOS compatible RRAM device with TaN/Ta/TaO$_{x}$/TaN structure was proposed for nonvolatile memory applications. Excellent resistive switching characteristics, including low operation voltages ($< 1$ V), low operation current (< 100 μA), good programming/erasing endurance ($> 10^{6}$ cycles), satisfactory uniformity, and reliable data retention, have been demonstrated. Furthermore, all of the elements in the fabricated TaN/Ta/TaO$_{x}$/TaN devices are highly compatible with modern CMOS manufacturing process, showing promising application in the next generation of nonvolatile memory.

Key words: resistive switching, tantalum oxide, CMOS compatibility

中图分类号:  (Conductivity phenomena in semiconductors and insulators)

  • 72.20.-i
73.40.Rw (Metal-insulator-metal structures) 61.72.jd (Vacancies) 68.60.-p (Physical properties of thin films, nonelectronic)