中国物理B ›› 2023, Vol. 32 ›› Issue (9): 97302-097302.doi: 10.1088/1674-1056/acc3fd

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Resistive switching properties of SnO2 nanowires fabricated by chemical vapor deposition

Ya-Qi Chen(陈亚琦)1,†, Zheng-Hua Tang(唐政华)1, Chun-Zhi Jiang(蒋纯志)1, and De-Gao Xu(徐徳高)2   

  1. 1 School of Physics, Electronics and Electrical Engineering, Xiangnan University, Chenzhou 423000, China;
    2 Key Laboratory of Low Dimensional Quantum Structures and Quantum Control, School of Physics and Electronics, Hunan Normal University, Changsha 410006, China
  • 收稿日期:2023-01-30 修回日期:2023-03-08 接受日期:2023-03-14 发布日期:2023-08-23
  • 通讯作者: Ya-Qi Chen E-mail:chenyaqi@xnu.edu.cn
  • 基金资助:
    Project supported by Chenzhou Science and Technology Plan Project of China (Grant No. ZDYF2020159) and Scientific Research Project of Hunan Provincial Department of Education (Grant No. 21C0708).

Resistive switching properties of SnO2 nanowires fabricated by chemical vapor deposition

Ya-Qi Chen(陈亚琦)1,†, Zheng-Hua Tang(唐政华)1, Chun-Zhi Jiang(蒋纯志)1, and De-Gao Xu(徐徳高)2   

  1. 1 School of Physics, Electronics and Electrical Engineering, Xiangnan University, Chenzhou 423000, China;
    2 Key Laboratory of Low Dimensional Quantum Structures and Quantum Control, School of Physics and Electronics, Hunan Normal University, Changsha 410006, China
  • Received:2023-01-30 Revised:2023-03-08 Accepted:2023-03-14 Published:2023-08-23
  • Contact: Ya-Qi Chen E-mail:chenyaqi@xnu.edu.cn
  • Supported by:
    Project supported by Chenzhou Science and Technology Plan Project of China (Grant No. ZDYF2020159) and Scientific Research Project of Hunan Provincial Department of Education (Grant No. 21C0708).

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摘要： Resistive switching (RS) devices have great application prospects in the emerging memory field and neuromorphic field, but their stability and unclear RS mechanism limit their relevant applications. In this work, we construct a hydrogenated Au/SnO2 nanowire (NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum. We find that the Ion/Ioff ratio increases from 20 to 104 when the read voltage decreases from 3.1 V to -1 V under the condition of electric field. Moreover, the rectification ratio can reach as high as 104 owing to oxygen ion migration modulated by the electric field. The nanodevice also shows non-volatile resistive memory characteristic. The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO2 NW/Au device. Our results provide a strategy for designing high-performance memristive devices based on SnO2 NWs.

关键词: Au/SnO2 NW/Au device, resistive switching characteristics, resistive switching mechanism

Abstract: Resistive switching (RS) devices have great application prospects in the emerging memory field and neuromorphic field, but their stability and unclear RS mechanism limit their relevant applications. In this work, we construct a hydrogenated Au/SnO2 nanowire (NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum. We find that the Ion/Ioff ratio increases from 20 to 104 when the read voltage decreases from 3.1 V to -1 V under the condition of electric field. Moreover, the rectification ratio can reach as high as 104 owing to oxygen ion migration modulated by the electric field. The nanodevice also shows non-volatile resistive memory characteristic. The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO2 NW/Au device. Our results provide a strategy for designing high-performance memristive devices based on SnO2 NWs.

Key words: Au/SnO2 NW/Au device, resistive switching characteristics, resistive switching mechanism

中图分类号:  (Electronic transport in nanoscale materials and structures)

  • 73.63.-b
81.07.Gf (Nanowires) 85.35.-p (Nanoelectronic devices) 66.30.Pa (Diffusion in nanoscale solids)