Resistive switching behavior and mechanism of HfOx films with large on/off ratio by structure design

doi:10.1088/1674-1056/ad053a

中国物理B ›› 2024, Vol. 33 ›› Issue (1): 17303-17303.doi: 10.1088/1674-1056/ad053a

Resistive switching behavior and mechanism of HfO_x films with large on/off ratio by structure design

Xianglin Huang(黄香林), Ying Wang(王英), Huixiang Huang(黄慧香), Li Duan(段理), and Tingting Guo(郭婷婷)^†

School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China

收稿日期:2023-07-15 修回日期:2023-09-16 接受日期:2023-10-20 出版日期:2023-12-13 发布日期:2023-12-29
通讯作者: Tingting Guo E-mail:guott@chd.edu.cn
基金资助:
This work was financially supported by the National Natural Science Foundation of China (Grant No. 51802025) and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2020JQ-384).

Resistive switching behavior and mechanism of HfO_x films with large on/off ratio by structure design

Xianglin Huang(黄香林), Ying Wang(王英), Huixiang Huang(黄慧香), Li Duan(段理), and Tingting Guo(郭婷婷)^†

School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China

Received:2023-07-15 Revised:2023-09-16 Accepted:2023-10-20 Online:2023-12-13 Published:2023-12-29
Contact: Tingting Guo E-mail:guott@chd.edu.cn
Supported by:
This work was financially supported by the National Natural Science Foundation of China (Grant No. 51802025) and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2020JQ-384).

摘要/Abstract

摘要： Different bilayer structures of HfO_x/Ti(TiO_x) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy, and the oxygen vacancies are analyzed. Highly improved on/off ratio (～10⁴) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_x sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_x-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.

关键词: HfO_x film, resistive switching, structure design, interface modulation

Abstract: Different bilayer structures of HfO_x/Ti(TiO_x) are designed for hafnium-based memory to investigate the switching characteristics. The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy, and the oxygen vacancies are analyzed. Highly improved on/off ratio (～10⁴) and much uniform switching parameters are observed for bilayer structures compared to single layer HfO_x sample, which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments. Furthermore, the reliability of the prepared samples is investigated. The carrier conduction behaviors of HfO_x-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed. In addition, the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height. The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.

Key words: HfO_x film, resistive switching, structure design, interface modulation

中图分类号: (Electrical properties of specific thin films)

73.61.-r

73.40.Rw (Metal-insulator-metal structures) 68.55.-a (Thin film structure and morphology) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)

Xianglin Huang(黄香林), Ying Wang(王英), Huixiang Huang(黄慧香), Li Duan(段理), and Tingting Guo(郭婷婷). Resistive switching behavior and mechanism of HfO_x films with large on/off ratio by structure design[J]. 中国物理B, 2024, 33(1): 17303-17303.

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Resistive switching behavior and mechanism of HfO_x films with large on/off ratio by structure design

Resistive switching behavior and mechanism of HfO_x films with large on/off ratio by structure design

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