Gate leakage mechanisms in Al2O3/SiN/AlN/GaN MIS-HEMTs on Si substrates

doi:10.1088/1674-1056/adb26d

中国物理B ›› 2025, Vol. 34 ›› Issue (4): 47103-047103.doi: 10.1088/1674-1056/adb26d

Gate leakage mechanisms in Al₂O₃/SiN/AlN/GaN MIS-HEMTs on Si substrates

Hui-Lin Li(李惠琳), Jie-Jie Zhu(祝杰杰)†, Ling-Jie Qin(秦灵洁), Si-Mei Huang(黄思美), Shi-Yang Li(李诗洋), Bo-Xuan Gao(高渤轩), Qing Zhu(朱青), and Xiao-Hua Ma(马晓华)

National Engineering Research Center of Wide Band-gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2024-12-16 修回日期:2025-01-21 接受日期:2025-02-05 出版日期:2025-04-15 发布日期:2025-04-15
通讯作者: Jie-Jie Zhu E-mail:jjzhu@mail.xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62188102, 62174125, and 62131014).

Gate leakage mechanisms in Al₂O₃/SiN/AlN/GaN MIS-HEMTs on Si substrates

Hui-Lin Li(李惠琳), Jie-Jie Zhu(祝杰杰)†, Ling-Jie Qin(秦灵洁), Si-Mei Huang(黄思美), Shi-Yang Li(李诗洋), Bo-Xuan Gao(高渤轩), Qing Zhu(朱青), and Xiao-Hua Ma(马晓华)

National Engineering Research Center of Wide Band-gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2024-12-16 Revised:2025-01-21 Accepted:2025-02-05 Online:2025-04-15 Published:2025-04-15
Contact: Jie-Jie Zhu E-mail:jjzhu@mail.xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 62188102, 62174125, and 62131014).

摘要/Abstract

摘要： This study investigates the gate leakage mechanisms of AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) fabricated on silicon substrate with Al$_2$O$_3$/SiN as stacked gate dielectrics, analyzing behaviors across high and low temperature conditions. In the high-temperature reverse bias region ($T > 275$ K, $V_{\rm G} < 0 $ V), Poole-Frenkel emission (PFE) dominates at low electric fields, while trap-assisted tunneling (TAT) is the primary mechanism at medium to high electric fields. The shift from PFE to TAT as the dominant conduction mechanism is due to the increased tunneling effect of electrons as the electric field strength rises. Additionally, TAT is found to be the main gate leakage mechanism under low-temperature reverse bias ($T < 275 $ K, $V_{\rm G} < 0 $ V). At lower temperatures, the reduction in electron energy causes the emission process to rely more on electric field forces. Furthermore, under forward bias conditions at both high and low temperatures ($225 {\rm K} < T < 375 {\rm K}$, $V_{\rm G} > 0 {\rm V}$), conduction is primarily dominated by defect-assisted tunneling (DAT).

关键词: AlN/GaN, MIS-HEMTs, gate leakage mechanism, trap-assisted tunneling (TAT)

Abstract: This study investigates the gate leakage mechanisms of AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) fabricated on silicon substrate with Al$_2$O$_3$/SiN as stacked gate dielectrics, analyzing behaviors across high and low temperature conditions. In the high-temperature reverse bias region ($T > 275$ K, $V_{\rm G} < 0 $ V), Poole-Frenkel emission (PFE) dominates at low electric fields, while trap-assisted tunneling (TAT) is the primary mechanism at medium to high electric fields. The shift from PFE to TAT as the dominant conduction mechanism is due to the increased tunneling effect of electrons as the electric field strength rises. Additionally, TAT is found to be the main gate leakage mechanism under low-temperature reverse bias ($T < 275 $ K, $V_{\rm G} < 0 $ V). At lower temperatures, the reduction in electron energy causes the emission process to rely more on electric field forces. Furthermore, under forward bias conditions at both high and low temperatures ($225 {\rm K} < T < 375 {\rm K}$, $V_{\rm G} > 0 {\rm V}$), conduction is primarily dominated by defect-assisted tunneling (DAT).

Key words: AlN/GaN, MIS-HEMTs, gate leakage mechanism, trap-assisted tunneling (TAT)

中图分类号: (III-V semiconductors)

71.55.Eq

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.40.-c (Electronic transport in interface structures) 73.43.Jn (Tunneling)

Hui-Lin Li(李惠琳), Jie-Jie Zhu(祝杰杰), Ling-Jie Qin(秦灵洁), Si-Mei Huang(黄思美), Shi-Yang Li(李诗洋), Bo-Xuan Gao(高渤轩), Qing Zhu(朱青), and Xiao-Hua Ma(马晓华). Gate leakage mechanisms in Al₂O₃/SiN/AlN/GaN MIS-HEMTs on Si substrates[J]. 中国物理B, 2025, 34(4): 47103-047103.

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Gate leakage mechanisms in Al₂O₃/SiN/AlN/GaN MIS-HEMTs on Si substrates

Gate leakage mechanisms in Al₂O₃/SiN/AlN/GaN MIS-HEMTs on Si substrates

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