中国物理B ›› 2016, Vol. 25 ›› Issue (2): 27701-027701.doi: 10.1088/1674-1056/25/2/027701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Zhi Jiang(蒋 智), Yi-Qi Zhuang(庄奕琪), Cong Li(李 聪), Ping Wang(王 萍), Yu-Qi Liu(刘予琪)   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2015-07-07 修回日期:2015-11-03 出版日期:2016-02-05 发布日期:2016-02-05
  • 通讯作者: Zhi Jiang E-mail:zjiang@xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Zhi Jiang(蒋 智), Yi-Qi Zhuang(庄奕琪), Cong Li(李 聪), Ping Wang(王 萍), Yu-Qi Liu(刘予琪)   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2015-07-07 Revised:2015-11-03 Online:2016-02-05 Published:2016-02-05
  • Contact: Zhi Jiang E-mail:zjiang@xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

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摘要： Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (D_it) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.

关键词: trap-assisted tunneling (TAT), tunnel field-effect transistors (TFETs), optical phonon scattering (OP), acoustic phonon scattering (AP)

Abstract: Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (D_it) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.

Key words: trap-assisted tunneling (TAT), tunnel field-effect transistors (TFETs), optical phonon scattering (OP), acoustic phonon scattering (AP)

中图分类号:  (Dielectric breakdown and space-charge effects)

  • 77.22.Jp
77.55.df (For silicon electronics) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 85.30.Tv (Field effect devices)