›› 2014, Vol. 23 ›› Issue (7): 77105-077105.doi: 10.1088/1674-1056/23/7/077105

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

吕元杰a, 冯志红a, 林兆军b, 郭红雨a, 顾国栋a, 尹甲运a, 王元刚a, 徐鹏a, 宋旭波a, 蔡树军a   

  1. a National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
    b School of Physics, Shandong University, Jinan 250100, China
  • 收稿日期:2013-10-24 修回日期:2014-01-14 出版日期:2014-07-15 发布日期:2014-07-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61306113 and 11174182).

Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Lü Yuan-Jie (吕元杰)a, Feng Zhi-Hong (冯志红)a, Lin Zhao-Jun (林兆军)b, Guo Hong-Yu (郭红雨)a, Gu Guo-Dong (顾国栋)a, Yin Jia-Yun (尹甲运)a, Wang Yuan-Gang (王元刚)a, Xu Peng (徐鹏)a, Song Xu-Bo (宋旭波)a, Cai Shu-Jun (蔡树军)a   

  1. a National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
    b School of Physics, Shandong University, Jinan 250100, China
  • Received:2013-10-24 Revised:2014-01-14 Online:2014-07-15 Published:2014-07-15
  • Contact: Feng Zhi-Hong E-mail:blueledviet@yahoo.com.cn
  • About author:71.55.Eq; 72.20.Fr; 72.10.-d; 77.22.Ej
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61306113 and 11174182).

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摘要： Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near room temperature while the interface roughness scattering becomes the dominant carrier scattering mechanism at low temperatures (～ 100 K). Based on measured current-voltage characteristics of prepared rectangular AlN/GaN heterostructure field-effect transistor under different temperatures, the temperature-dependent variation of electron mobility under different gate biases is investigated. The polarization Coulomb field (PCF) scattering is found to become an important carrier scattering mechanism after device processing under different temperatures. Moreover, it is found that the PCF scattering is not generated from the thermal stresses, but from the piezoelectric contribution induced by the electrical field in the thin AlN barrier layer. This is attributed to the large lattice mismatch between the extreme thinner AlN barrier layer and GaN, giving rise to a stronger converse piezoelectric effect.

关键词: AlN/GaN, electron mobility, polarization Coulomb field scattering, polarization

Abstract: Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near room temperature while the interface roughness scattering becomes the dominant carrier scattering mechanism at low temperatures (～ 100 K). Based on measured current-voltage characteristics of prepared rectangular AlN/GaN heterostructure field-effect transistor under different temperatures, the temperature-dependent variation of electron mobility under different gate biases is investigated. The polarization Coulomb field (PCF) scattering is found to become an important carrier scattering mechanism after device processing under different temperatures. Moreover, it is found that the PCF scattering is not generated from the thermal stresses, but from the piezoelectric contribution induced by the electrical field in the thin AlN barrier layer. This is attributed to the large lattice mismatch between the extreme thinner AlN barrier layer and GaN, giving rise to a stronger converse piezoelectric effect.

Key words: AlN/GaN, electron mobility, polarization Coulomb field scattering, polarization

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
72.20.Fr (Low-field transport and mobility; piezoresistance) 72.10.-d (Theory of electronic transport; scattering mechanisms) 77.22.Ej (Polarization and depolarization)