›› 2014, Vol. 23 ›› Issue (12): 127104-127104.doi: 10.1088/1674-1056/23/12/127104

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effects of GaN cap layer thickness on an AlN/GaN heterostructure

赵景涛a, 林兆军a, 栾崇彪a, 吕元杰b, 冯志宏b, 杨铭a   

  1. a School of Physics, Shandong University, Jinan 250100, China;
    b National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • 收稿日期:2014-06-03 修回日期:2014-08-05 出版日期:2014-12-15 发布日期:2014-12-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

Effects of GaN cap layer thickness on an AlN/GaN heterostructure

Zhao Jing-Tao (赵景涛)a, Lin Zhao-Jun (林兆军)a, Luan Chong-Biao (栾崇彪)a, Lü Yuan-Jie (吕元杰)b, Feng Zhi-Hong (冯志宏)b, Yang Ming (杨铭)a   

  1. a School of Physics, Shandong University, Jinan 250100, China;
    b National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
  • Received:2014-06-03 Revised:2014-08-05 Online:2014-12-15 Published:2014-12-15
  • Contact: Lin Zhao-Jun E-mail:linzj@sdu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

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摘要： In this study, we investigate the effects of GaN cap layer thickness on the two-dimensional electron gas (2DEG) electron density and 2DEG electron mobility of AlN/GaN heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the GaN cap layer thickness of an AlN/GaN heterostructure has influences on the 2DEG electron density and the electron mobility. For the AlN/GaN heterostructures with a 3-nm AlN barrier layer, the optimized thickness of the GaN cap layer is around 4 nm and the strained a-axis lattice constant of the AlN barrier layer is less than that of GaN.

关键词: AlN/GaN heterostructure, 2DEG, GaN cap layer, a-axis lattice constant

Abstract: In this study, we investigate the effects of GaN cap layer thickness on the two-dimensional electron gas (2DEG) electron density and 2DEG electron mobility of AlN/GaN heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the GaN cap layer thickness of an AlN/GaN heterostructure has influences on the 2DEG electron density and the electron mobility. For the AlN/GaN heterostructures with a 3-nm AlN barrier layer, the optimized thickness of the GaN cap layer is around 4 nm and the strained a-axis lattice constant of the AlN barrier layer is less than that of GaN.

Key words: AlN/GaN heterostructure, 2DEG, GaN cap layer, a-axis lattice constant

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
77.22.Ej (Polarization and depolarization) 77.80.bn (Strain and interface effects)