Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

doi:10.1088/1674-1056/26/10/107301

中国物理B ›› 2017, Vol. 26 ›› Issue (10): 107301-107301.doi: 10.1088/1674-1056/26/10/107301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Lei Yang(杨磊), Yang Wang(王杨)

School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, China

收稿日期:2017-04-19 修回日期:2017-06-24 出版日期:2017-10-05 发布日期:2017-10-05
通讯作者: Hong-Dong Zhao E-mail:zhaohd@hebut.edu.cn
基金资助:
Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. F2013202256).

Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Lei Yang(杨磊), Yang Wang(王杨)

School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401, China

Received:2017-04-19 Revised:2017-06-24 Online:2017-10-05 Published:2017-10-05
Contact: Hong-Dong Zhao E-mail:zhaohd@hebut.edu.cn
Supported by:
Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. F2013202256).

摘要/Abstract

摘要：

In this work, we use a 3-nm-thick Al_0.64In_0.36N back-barrier layer in In_0.17Al_0.83N/GaN high-electron mobility transistor (HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al_0.64In_0.36N back-barrier on the direct-current (DC) and radio-frequency (RF) characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al_0.64In_0.36N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect (SCE) for gate length decreasing down to 60 nm (9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency (f_T) and power gain cut-off frequency (f_max) of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.

关键词: InAlN/GaN HEMT, back barrier, electron confinement, short-channel effect (SCE)

Abstract:

Key words: InAlN/GaN HEMT, back barrier, electron confinement, short-channel effect (SCE)

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

韩铁成, 赵红东, 杨磊, 王杨. Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier[J]. 中国物理B, 2017, 26(10): 107301-107301.

Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Lei Yang(杨磊), Yang Wang(王杨). Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier[J]. Chin. Phys. B, 2017, 26(10): 107301-107301.

参考文献 26

[1]	Sun H, Alt A R, Benedickter H, Feltin E, Carlin J F, Gonschorek M, Grandjean N and Bolognesi R C 2010 IEEE Electron Dev. Lett. 31 293
[2]	Wang R, Saunier P, Xing X, Lian C, Gao X, Gou S, Snider G, Fay P, Jena D and Xing H 2010 IEEE Electron Dev. Lett. 31 1383
[3]	Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Fang T, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D and Xing H 2012 IEEE Electron Dev. Lett. 33 988
[4]	Zhang P, Zhao S L, Xue J S, Zhu J J, Ma X H, Zhang J C and Hao Y 2015 Chin. Phys. B 24 127306
[5]	Zhou H, Lou X, Conrad N J, Si M, Wu H, Alghamdi, Guo S, Gordon R G and Ye P D 2016 IEEE Electron Dev. Lett. 37 556
[6]	Han T T, Dun S B, Lv Y J, Gu G D, Song X B, Wang Y G, Xu P and Feng Z H 2016 J. Semicond. 37 024007
[7]	Uren M J, Nash K J, Balmer R S, Martin T, Morvan E, Caillas N, Delage S L, Ducatteau D, Grimbert B and De Jaeger J C 2006 IEEE Trans. Electron Dev. 53 395
[8]	Zervos M, Kostopoulos A, Constantinidis G, Kayambaki M and Georgakilas A 2002 J. Appl. Phys. 91 4387
[9]	Bahat-Treidel E, Hilt O, Brunner F, Würfl J and Tränkle G 2008 IEEE Trans. Electron Dev. 55 3354
[10]	Lee D S, Gao X, Guo S and Palacios T 2011 IEEE Electron Dev. Lett. 32 617
[11]	Meng F, Zhang J, Zhou H, Ma J, Xue J, Dang L, Zhang L, Lu M, Ai S, Li X and Hao Y 2012 J. Appl. Phys. 112 023707
[12]	Peng E, Wang X, Xiao H, Wang C, Yin H, Chen H, Feng C, Jiang L, Hou X and Wang Z 2013 J. Cryst. Growth 383 25
[13]	Wang C, Zhao M D, Pei J Q, He Y L, Li X D, Zheng X F, Mao Wei, Ma X H, Zhang J C and Hao Y 2016 Acta Phys. Sin. 65 038501(in Chinese)
[14]	Ho S Y, Lee C H, Tzou A J, Kou H C, Wu Y R and Huang J J 2017 IEEE Trans. Electron Dev. 64 1505
[15]	Liu J, Zhou Y, Lau K M and Chen K J 2006 IEEE Electron Dev. Lett. 27 10
[16]	Palacios T, Chakraborty A, Heikman S, Keller S, DenBaars S P and Mishra U K 2006 IEEE Electron Dev. Lett. 27 13
[17]	Lee D S, Gao X, Guo S, Kopp D, Fay P and Palacios T 2011 IEEE Electron Dev. Lett. 32 1525
[18]	Kamath A, Patil T, Adari R, Bhattacharya I, Ganguly S, Aldhaheri R W, Hussain M A and Saha D 2012 IEEE Electron Dev. Lett. 33 1690
[19]	He X G, Zhao D G, Jiang D S, Zhu J J, Chen P, Liu Z S, Le L C, Yang J, Li X J, Liu J P, Zhang L Q and Yang H 2016 J. Alloys Compd. 662 16
[20]	SILVACO Int., 2016 ATLAS User's Manual, Device Simulation Software (Santa Clara:CA) p. 2
[21]	Ambacher O, Majewski J, Miskys C, Link A, Hermann M, Eickhoff M, Stutzmann M, Bernardini F, Fiorentini V, Tilak V, Schaff B and Eastman L F 2002 J. Phys.:Condens. Matter 14 3399
[22]	Pelá R R, Caetano C, Ferreira L G, Furthmüller J and Teles L K 2011 Appl. Phys. Lett. 98 151907
[23]	Gonschorek M, Carlin J F, Feltin E, Py, M A, Grandjean N, Darakchieva V, Monemar B, Lorenz M and Ramm G 2008 J. Appl. Phys. 103 093714
[24]	He X G, Zhao D G and Jiang D S 2015 Chin. Phys. B 24 067301
[25]	Simin G, Hu X, Tarakji A, Zhang J, Koudymov A, Saygi S, Yang J, Khan A, Shur M S and Gsaka R 2001 Jpn. J. Appl. Phys. 40 L1142
[26]	Jessen G H, Fitch R C, Gillespie J K, Via G, Crespo A, Langley D, Denninghoff D J, Trejo M and Heller E R 2007 IEEE Trans. Electron Dev. 54 2589

Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 26

相关文章 2

Metrics

本文评价

推荐阅读 0

[1]	韩铁成, 赵红东, 彭晓灿. Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer[J]. 中国物理B, 2019, 28(4): 47302-047302.
[2]	邓小川, 孙鹤, 饶成元, 张波. High-power SiC MESFET using dual p-buffer layer for S-band power amplifier[J]. Chin. Phys. B, 2013, 22(1): 17302-017302.