Gate leakage mechanisms in Al
2O
3/SiN/AlN/GaN MIS-HEMTs on Si substrates
Hui-Lin Li(李惠琳), Jie-Jie Zhu(祝杰杰), Ling-Jie Qin(秦灵洁), Si-Mei Huang(黄思美), Shi-Yang Li(李诗洋), Bo-Xuan Gao(高渤轩), Qing Zhu(朱青), and Xiao-Hua Ma(马晓华)
Gate leakage mechanisms in Al
2O
3/SiN/AlN/GaN MIS-HEMTs on Si substrates
Hui-Lin Li(李惠琳), Jie-Jie Zhu(祝杰杰), Ling-Jie Qin(秦灵洁), Si-Mei Huang(黄思美), Shi-Yang Li(李诗洋), Bo-Xuan Gao(高渤轩), Qing Zhu(朱青), and Xiao-Hua Ma(马晓华)
中国物理B
.
2025, (4): 47103
-047103
.
DOI: 10.1088/1674-1056/adb26d