中国物理B ›› 2024, Vol. 33 ›› Issue (10): 108401-108401.doi: 10.1088/1674-1056/ad6255
Study of leakage current degradation based on stacking faults expansion in irradiated SiC junction barrier Schottky diodes
Maojiu Luo(罗茂久)1, Yourun Zhang(张有润)1,†, Yucheng Wang(王煜丞)1, Hang Chen(陈航)2, Rong Zhou(周嵘)2, Zhi Wang(王智)2, Chao Lu(陆超)2, and Bo Zhang(张波)1
- 1 State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China;
2 China Zhenhua Group Yongguang Electronics Co., Ltd., Guiyang 550018, China
Study of leakage current degradation based on stacking faults expansion in irradiated SiC junction barrier Schottky diodes
Maojiu Luo(罗茂久)1, Yourun Zhang(张有润)1,†, Yucheng Wang(王煜丞)1, Hang Chen(陈航)2, Rong Zhou(周嵘)2, Zhi Wang(王智)2, Chao Lu(陆超)2, and Bo Zhang(张波)1
- 1 State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China;
2 China Zhenhua Group Yongguang Electronics Co., Ltd., Guiyang 550018, China
摘要： A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky (JBS) diodes under heavy ion irradiation. We propose and verify that the generation of stacking faults (SFs) induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results. The irradiation experiment was carried out based on Ta ions with high linear energy transfer (LET) of 90.5 MeV/(mg/cm$^{2}$). It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20% of the rated reverse voltage. Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes. We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation. Finally, three-dimensional (3D) TCAD simulation was employed to evaluate the excessive electron-hole pairs (EHPs) concentration excited by heavy ion irradiation. It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate. The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.
中图分类号: (Power electronics; power supply circuits)
- 84.30.Jc