Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

doi:10.1088/1674-1056/acf303

中国物理B ›› 2024, Vol. 33 ›› Issue (1): 16104-16104.doi: 10.1088/1674-1056/acf303

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Ya-Hui Feng(冯亚辉)¹, Hong-Xia Guo(郭红霞)^2,4,†, Yi-Wei Liu(刘益维)², Xiao-Ping Ouyang(欧阳晓平)^1,4, Jin-Xin Zhang(张晋新)³, Wu-Ying Ma(马武英)⁴, Feng-Qi Zhang(张凤祁)⁴, Ru-Xue Bai(白如雪)², Xiao-Hua Ma(马晓华)¹, and Yue Hao(郝跃)¹

1 State Key Laboratory of Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
3 School of Space Science and Technology, Xidian University, Xi'an 710071, China;
4 State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation, Northwest Institute of Nuclear Technology, Xi'an 710024, China

收稿日期:2023-07-14 修回日期:2023-08-15 接受日期:2023-08-23 出版日期:2023-12-13 发布日期:2024-01-03
通讯作者: Hong-Xia Guo E-mail:guohxnint@126.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574171, 61704127, 11875229, 51872251, and 12027813).

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

1 State Key Laboratory of Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China;
3 School of Space Science and Technology, Xidian University, Xi'an 710071, China;
4 State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation, Northwest Institute of Nuclear Technology, Xi'an 710024, China

Received:2023-07-14 Revised:2023-08-15 Accepted:2023-08-23 Online:2023-12-13 Published:2024-01-03
Contact: Hong-Xia Guo E-mail:guohxnint@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574171, 61704127, 11875229, 51872251, and 12027813).

摘要/Abstract

摘要： The single event effect (SEE) sensitivity of silicon—germanium heterojunction bipolar transistor (SiGe HBT) irradiated by 100-MeV proton is investigated. The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center, where the protons pass through the larger collector-substrate (CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-MeV proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly. Notably, at the same proton flux, there is only one single event transient (SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-MeV protons. To further evaluate the tolerance of the device, the influence of proton on SiGe HBT after gamma-ray (⁶⁰Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

关键词: silicon—germanium heterojunction bipolar transistor (SiGe HBT), 100-MeV proton, technology computer-aided design (TCAD), single event effect (SEE)

Abstract: The single event effect (SEE) sensitivity of silicon—germanium heterojunction bipolar transistor (SiGe HBT) irradiated by 100-MeV proton is investigated. The simulation results indicate that the most sensitive position of the SiGe HBT device is the emitter center, where the protons pass through the larger collector-substrate (CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-MeV proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly. Notably, at the same proton flux, there is only one single event transient (SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-MeV protons. To further evaluate the tolerance of the device, the influence of proton on SiGe HBT after gamma-ray (⁶⁰Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

Key words: silicon—germanium heterojunction bipolar transistor (SiGe HBT), 100-MeV proton, technology computer-aided design (TCAD), single event effect (SEE)

中图分类号: (Ge and Si)

61.72.uf

61.80.Ed (γ-ray effects) 61.80.-x (Physical radiation effects, radiation damage) 61.80.Jh (Ion radiation effects)

Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Yi-Wei Liu(刘益维), Xiao-Ping Ouyang(欧阳晓平), Jin-Xin Zhang(张晋新), Wu-Ying Ma(马武英), Feng-Qi Zhang(张凤祁), Ru-Xue Bai(白如雪), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃). Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect[J]. 中国物理B, 2024, 33(1): 16104-16104.

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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

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