Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

doi:10.1088/1674-1056/acd8a1

中国物理B ›› 2023, Vol. 32 ›› Issue (12): 127102-127102.doi: 10.1088/1674-1056/acd8a1

Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

Yuwei Zhou(周雨威)¹, Minhan Mi(宓珉瀚)^2,†, Pengfei Wang(王鹏飞)², Can Gong(龚灿)², Yilin Chen(陈怡霖)¹, Zhihong Chen(陈治宏)², Jielong Liu(刘捷龙)¹, Mei Yang(杨眉)¹, Meng Zhang(张濛)², Qing Zhu(朱青)², Xiaohua Ma(马晓华)², and Yue Hao(郝跃)²

1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2022-09-02 修回日期:2023-05-19 接受日期:2023-05-25 出版日期:2023-11-14 发布日期:2023-11-22
通讯作者: Minhan Mi E-mail:miminhan@qq.com
基金资助:
Project supported by the National Key Research and Development Project of China (Grant No.2021YFB3602404), in part by the National Natural Science Foundation of China (Grant Nos.61904135 and 62234009), the Key R&D Program of Guangzhou (Grant No.202103020002), Wuhu and Xidian University special fund for industry-university-research cooperation (Grant No.XWYCXY-012021014-HT), the Fundamental Research Funds for the Central Universities (Grant No.XJS221110), the Natural Science Foundation of Shaanxi, China (Grant No.2022JM-377), and the Innovation Fund of Xidian University (Grant No.YJSJ23019).

Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2022-09-02 Revised:2023-05-19 Accepted:2023-05-25 Online:2023-11-14 Published:2023-11-22
Contact: Minhan Mi E-mail:miminhan@qq.com
Supported by:
Project supported by the National Key Research and Development Project of China (Grant No.2021YFB3602404), in part by the National Natural Science Foundation of China (Grant Nos.61904135 and 62234009), the Key R&D Program of Guangzhou (Grant No.202103020002), Wuhu and Xidian University special fund for industry-university-research cooperation (Grant No.XWYCXY-012021014-HT), the Fundamental Research Funds for the Central Universities (Grant No.XJS221110), the Natural Science Foundation of Shaanxi, China (Grant No.2022JM-377), and the Innovation Fund of Xidian University (Grant No.YJSJ23019).

摘要/Abstract

摘要： Improved radio-frequency (RF) power performance of InAlN/GaN high electron mobility transistor (HEMT) is achieved by optimizing the rapid thermal annealing (RTA) process for high-performance low-voltage terminal applications. By optimizing the RTA temperature and time, the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device. Besides, compared with the non-optimized RTA HEMT, the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer. Benefiting from the lowered parasitic resistance, improved maximum output current density of 2279 mA·mm^-1 and higher peak extrinsic transconductance of 526 mS·mm^-1 are obtained for the optimized RTA HEMT. In addition, due to the superior heterojunction quality, the optimized HEMT shows reduced off-state leakage current of 7×10^-3 mA·mm^-1 and suppressed current collapse of only 4%, compared with those of 1×10^-1 mA·mm^-1 and 15% for the non-optimized one. At 8 GHz and V_DS of 6 V, a significantly improved power-added efficiency of 62% and output power density of 0.71 W·mm^-1 are achieved for the optimized HEMT, as the result of the improvement in output current, knee voltage, off-state leakage current, and current collapse, which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.

关键词: InAlN/GaN, rapid thermal annealing, low voltage, RF power performance, terminal applications

Abstract: Improved radio-frequency (RF) power performance of InAlN/GaN high electron mobility transistor (HEMT) is achieved by optimizing the rapid thermal annealing (RTA) process for high-performance low-voltage terminal applications. By optimizing the RTA temperature and time, the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device. Besides, compared with the non-optimized RTA HEMT, the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer. Benefiting from the lowered parasitic resistance, improved maximum output current density of 2279 mA·mm^-1 and higher peak extrinsic transconductance of 526 mS·mm^-1 are obtained for the optimized RTA HEMT. In addition, due to the superior heterojunction quality, the optimized HEMT shows reduced off-state leakage current of 7×10^-3 mA·mm^-1 and suppressed current collapse of only 4%, compared with those of 1×10^-1 mA·mm^-1 and 15% for the non-optimized one. At 8 GHz and V_DS of 6 V, a significantly improved power-added efficiency of 62% and output power density of 0.71 W·mm^-1 are achieved for the optimized HEMT, as the result of the improvement in output current, knee voltage, off-state leakage current, and current collapse, which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.

Key words: InAlN/GaN, rapid thermal annealing, low voltage, RF power performance, terminal applications

中图分类号: (III-V semiconductors)

71.55.Eq

73.20.-r (Electron states at surfaces and interfaces) 73.50.-h (Electronic transport phenomena in thin films)

Yuwei Zhou(周雨威), Minhan Mi(宓珉瀚), Pengfei Wang(王鹏飞), Can Gong(龚灿), Yilin Chen(陈怡霖), Zhihong Chen(陈治宏), Jielong Liu(刘捷龙), Mei Yang(杨眉), Meng Zhang(张濛), Qing Zhu(朱青), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications[J]. 中国物理B, 2023, 32(12): 127102-127102.

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Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

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