Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications
Yuwei Zhou(周雨威), Minhan Mi(宓珉瀚), Pengfei Wang(王鹏飞), Can Gong(龚灿), Yilin Chen(陈怡霖), Zhihong Chen(陈治宏), Jielong Liu(刘捷龙), Mei Yang(杨眉), Meng Zhang(张濛), Qing Zhu(朱青), Xiaohua Ma(马晓华), and Yue Hao(郝跃)
Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications
Yuwei Zhou(周雨威), Minhan Mi(宓珉瀚), Pengfei Wang(王鹏飞), Can Gong(龚灿), Yilin Chen(陈怡霖), Zhihong Chen(陈治宏), Jielong Liu(刘捷龙), Mei Yang(杨眉), Meng Zhang(张濛), Qing Zhu(朱青), Xiaohua Ma(马晓华), and Yue Hao(郝跃)
中国物理B
.
2023, (12): 127102
-127102
.
DOI: 10.1088/1674-1056/acd8a1