中国物理B ›› 2022, Vol. 31 ›› Issue (6): 67102-067102.doi: 10.1088/1674-1056/ac422b

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Polarization-dependent ultrafast carrier dynamics in GaAs with anisotropic response

Ya-Chao Li(李亚超)1,2, Chao Ge(葛超)1,2, Peng Wang(汪鹏)1,2, Shuang Liu(刘爽)1,2, Xiao-Ran Ma(麻晓冉)1,2, Bing Wang(王冰)1,2, Hai-Ying Song(宋海英)1,2,†, and Shi-Bing Liu(刘世炳)1,2,‡   

  1. 1 Strong-field and Ultrafast Photonics Laboratory, Key Laboratory of Trans-scale Laser Manufacturing Technology, Ministry of Education, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China;
    2 Strong-field and Ultrafast Photonics Laboratory, Beijing Engineering Research Center of Laser Technology, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2021-11-04 修回日期:2021-12-07 接受日期:2021-12-11 出版日期:2022-05-17 发布日期:2022-05-19
  • 通讯作者: Hai-Ying Song, Shi-Bing Liu E-mail:hysong@bjut.edu.cn;sbliu@bjut.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51875006 and 51705009).

Polarization-dependent ultrafast carrier dynamics in GaAs with anisotropic response

Ya-Chao Li(李亚超)1,2, Chao Ge(葛超)1,2, Peng Wang(汪鹏)1,2, Shuang Liu(刘爽)1,2, Xiao-Ran Ma(麻晓冉)1,2, Bing Wang(王冰)1,2, Hai-Ying Song(宋海英)1,2,†, and Shi-Bing Liu(刘世炳)1,2,‡   

  1. 1 Strong-field and Ultrafast Photonics Laboratory, Key Laboratory of Trans-scale Laser Manufacturing Technology, Ministry of Education, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China;
    2 Strong-field and Ultrafast Photonics Laboratory, Beijing Engineering Research Center of Laser Technology, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
  • Received:2021-11-04 Revised:2021-12-07 Accepted:2021-12-11 Online:2022-05-17 Published:2022-05-19
  • Contact: Hai-Ying Song, Shi-Bing Liu E-mail:hysong@bjut.edu.cn;sbliu@bjut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51875006 and 51705009).

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摘要： The transient dynamics of anisotropic properties of GaAs was systematically studied by polarization-dependent ultrafast time-resolved transient absorption. Our findings revealed that the anisotropy of reflectivity was enhanced in both pump-induced and probe-induced processes, suggesting an extraordinary resonance absorption of photon-phonon coupling (PPC) with intrinsic anisotropic characteristic in carrier relaxation, regardless of the concrete crystallinity and orientation of GaAs sample. The results, delivering in-depth cognition about the polarization-dependent ultrafast carrier dynamics, also proved the paramount importance of interaction between polarized laser and semiconductor.

关键词: ultrafast pump-probe, polarization-dependence, photon-phonon coupling, GaAs

Abstract: The transient dynamics of anisotropic properties of GaAs was systematically studied by polarization-dependent ultrafast time-resolved transient absorption. Our findings revealed that the anisotropy of reflectivity was enhanced in both pump-induced and probe-induced processes, suggesting an extraordinary resonance absorption of photon-phonon coupling (PPC) with intrinsic anisotropic characteristic in carrier relaxation, regardless of the concrete crystallinity and orientation of GaAs sample. The results, delivering in-depth cognition about the polarization-dependent ultrafast carrier dynamics, also proved the paramount importance of interaction between polarized laser and semiconductor.

Key words: ultrafast pump-probe, polarization-dependence, photon-phonon coupling, GaAs

中图分类号:  (Polaritons (including photon-phonon and photon-magnon interactions))

  • 71.36.+c
78.47.J- (Ultrafast spectroscopy (<1 psec)) 82.53.-k (Femtochemistry) 78.47.js (Free polarization decay)