中国物理B ›› 2020, Vol. 29 ›› Issue (5): 58501-058501.doi: 10.1088/1674-1056/ab7d99

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Zhijun Lyu(吕智军), Hongliang Lu(吕红亮), Yuming Zhang(张玉明), Yimen Zhang(张义门), Bin Lu(芦宾), Yi Zhu(朱翊), Fankang Meng(孟凡康), Jiale Sun(孙佳乐)   

  1. 1 The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China
  • 收稿日期:2019-12-23 修回日期:2020-02-05 出版日期:2020-05-05 发布日期:2020-05-05
  • 通讯作者: Hongliang Lu E-mail:hllv@mail.xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 90304190002).

Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Zhijun Lyu(吕智军)1, Hongliang Lu(吕红亮)1, Yuming Zhang(张玉明)1, Yimen Zhang(张义门)1, Bin Lu(芦宾)2, Yi Zhu(朱翊)1, Fankang Meng(孟凡康)1, Jiale Sun(孙佳乐)1   

  1. 1 The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China
  • Received:2019-12-23 Revised:2020-02-05 Online:2020-05-05 Published:2020-05-05
  • Contact: Hongliang Lu E-mail:hllv@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 90304190002).

摘要: A novel vertical graded source tunnel field-effect transistor (VGS-TFET) is proposed to improve device performance. By introducing a source with linearly graded component, the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing (SS) due to the improved band-to-band tunneling efficiency. Compared with the conventional TFETs, much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec. Furthermore, the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications.

关键词: vertical graded source, band-to-band tunneling (BTBT), tunnel field-effect transistor (TFET)

Abstract: A novel vertical graded source tunnel field-effect transistor (VGS-TFET) is proposed to improve device performance. By introducing a source with linearly graded component, the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing (SS) due to the improved band-to-band tunneling efficiency. Compared with the conventional TFETs, much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec. Furthermore, the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications.

Key words: vertical graded source, band-to-band tunneling (BTBT), tunnel field-effect transistor (TFET)

中图分类号:  (Junction breakdown and tunneling devices (including resonance tunneling devices))

  • 85.30.Mn
81.05.Ea (III-V semiconductors) 85.30.Tv (Field effect devices)