Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source
吕智军, 吕红亮, 张玉明, 张义门, 芦宾, 朱翊, 孟凡康, 孙佳乐
Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source
Zhijun Lyu(吕智军), Hongliang Lu(吕红亮), Yuming Zhang(张玉明), Yimen Zhang(张义门), Bin Lu(芦宾), Yi Zhu(朱翊), Fankang Meng(孟凡康), Jiale Sun(孙佳乐)
中国物理B
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2020, (5): 58501
-058501
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DOI: 10.1088/1674-1056/ab7d99