[1] |
Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
doi: 10.1038/nature03090
|
[2] |
Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Goncalves A M F, Marques A J S, Pereira L M N and Martins R F P 2005 Adv. Mater. 17 590
doi: 10.1002/adma.200400368
|
[3] |
Song K, Noh J, Jun T, Jung Y, Kang H Y and Moon J 2010 Adv. Mater. 22 4308
doi: 10.1002/adma.201002163
|
[4] |
Liu Y R, S J, Lai P T and Yao R H 2014 Chin. Phys. B 23 068501
doi: 10.1088/1674-1056/23/6/068501
|
[5] |
Micjan M, Novota M, Telek P, Donoval M and Weis M 2019 Chin. Phys. B 28 118501
doi: 10.1088/1674-1056/ab44a1
|
[6] |
Li J, Zhong D Y, Huang C X, Li X F and Zhang J H 2018 IEEE Trans. Electron. Devices 65 2838
|
[7] |
Orlandi M O 2020 Tin Oxide Materials-Synthesis, Properties, and Applications (Amsterdam: Elsevier) p. 441
|
[8] |
Smith J, Bashir A, Adamopoulos G, Anthony J E, Bradley D D C, Heeney M, McCulloch I and Anthopoulos T D 2010 Adv. Mater. 22 3598
doi: 10.1002/adma.201000195
|
[9] |
Yang C, Kwack Y, Kim S H, An T K, Hong K, Nam S, Park M, Choi W S and Park C E 2011 Org. Electron. 12 411
doi: 10.1016/j.orgel.2010.12.008
|
[10] |
Yang J, Wang Y M, Li Y P, Yuan Y Z, Hu Z J, Ma P F, Zhou L, Wang Q P, Song A M and Xin Q 2018 IEEE Electron Device Lett. 39 516
doi: 10.1109/LED.2018.2809796
|
[11] |
Nakanotani H, Yahiro M, Adachi C and Yano K 2007 Appl. Phys. Lett. 90 262104
doi: 10.1063/1.2752023
|
[12] |
Guo X J, Feng L R, Cui Q Y and Xu X L 2014 IEEE Electron Device Lett. 35 542
doi: 10.1109/LED.2014.2308210
|
[13] |
Opitz A, Bronner M, Brütting W, Himmerlich M, Schaefer J A and Krischok S 2007 Appl. Phys. Lett. 90 212112
doi: 10.1063/1.2742640
|
[14] |
Anthopoulos T D, Setayesh S, Smits E, Cölle M, Cantatore E, de B Blom P W M and de D M 2006 Adv. Mater. 18 1900
doi: 10.1002/adma.200502677
|
[15] |
Bisri S Z, Piliego C, Gao J and Loi M A 2014 Adv. Mater. 26 1176
doi: 10.1002/adma.201304280
|
[16] |
Zhou Y, Han S T, Zhou L, Yan Y, Huang L B, Huang J and Roy V A L 2013 J. Mater. Chem. C 1 7073
doi: 10.1039/c3tc31456a
|
[17] |
Luo H, Liang L Y, Cao H T, Dai M Z, Lu Y C and Wang M 2015 ACS Appl. Mater. Inter. 7 17023
doi: 10.1021/acsami.5b02964
|
[18] |
Lan L F, Zhao M J, Xiong N N, Xiao P, Shi W, Xu M and Peng J B 2012 IEEE Electron Device Lett. 33 827
doi: 10.1109/LED.2012.2190966
|
[19] |
Brotherton S D 2013 Introduction to Thin Film Transistors (Heidelberg: Springer) p. 46
|
[20] |
Song W, Lan L F, Li M L, Wang L, Lin Z G, Sun S, Li Y Z, Song E L, Gao P X, Li Y and Peng J B 2017 J. Phys. D: Appl. Phys. 50 385108
doi: 10.1088/1361-6463/aa83ee
|
[21] |
Song W, Lan L F, Xiao P, Lin Z G, Sun S and Peng J B 2016 IEEE Trans. Electron. Devices 63 4315
doi: 10.1109/TED.2016.2612690
|
[22] |
Choi Y, Kim G H, Jeong W H, Bae J H, Kim H J, Hong J M and Yu W J 2010 Appl. Phys. Lett. 97 162102
doi: 10.1063/1.3503964
|
[23] |
Steudel S, Vusser S D, Jonge S D, Janssen D, Verlaak S, Genoe J and Heremans P 2004 Appl. Phys. Lett. 85 4400
doi: 10.1063/1.1815042
|
[24] |
Risteska A, Chan K Y, Anthopoulos T D, Gordijn A, Stiebig H, Nakamura M and Knipp D 2012 Org. Electron. 13 2816
doi: 10.1016/j.orgel.2012.08.038
|
[25] |
Baeg K J, Caironi M and Noh Y Y 2013 Adv. Mater. 25 4210
doi: 10.1002/adma.201205361
|
[26] |
Klauk H 2010 Chem. Soc. Rev. 39 2643
doi: 10.1039/b909902f
|