中国物理B ›› 2020, Vol. 29 ›› Issue (5): 58503-058503.doi: 10.1088/1674-1056/ab7e96

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors

Sheng Sun(孙圣), Yuzhi Li(李育智), Shengdong Zhang(张盛东)   

  1. 1 School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
    2 TCL China Star Optoelectronics Technology Co., Ltd., Shenzhen 518055, China
  • 收稿日期:2019-12-27 修回日期:2020-02-20 出版日期:2020-05-05 发布日期:2020-05-05
  • 通讯作者: Shengdong Zhang E-mail:zhangsd@pku.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574003 and 61774010) and Shenzhen Municipal Scientific Program, China (Grant Nos. GGFW20170728163447038 and JCYJ20180504165449640).

High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors

Sheng Sun(孙圣)1,2, Yuzhi Li(李育智)1,2, Shengdong Zhang(张盛东)1   

  1. 1 School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
    2 TCL China Star Optoelectronics Technology Co., Ltd., Shenzhen 518055, China
  • Received:2019-12-27 Revised:2020-02-20 Online:2020-05-05 Published:2020-05-05
  • Contact: Shengdong Zhang E-mail:zhangsd@pku.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574003 and 61774010) and Shenzhen Municipal Scientific Program, China (Grant Nos. GGFW20170728163447038 and JCYJ20180504165449640).

摘要: This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor (CMOS)-like inverters. Pentacene is employed as a p-type organic semiconductor for its stable electrical performance, while the solution-processed scandium (Sc) substituted indium oxide (ScInO) is employed as an n-type inorganic semiconductor. It is observed that by regulating the doping concentration of Sc, the electrical performance of the n-type semiconductor could be well controlled to obtain a balance with the electrical performance of the p-type semiconductor, which is vital for achieving high-performance inverters. When the doping concentration of Sc is 10 at.%, the CMOS-like logic inverters exhibit a voltage gain larger than 80 and a wide noise margin (53% of the theoretical value). The inverters also respond well to the input signal with frequency up to 500 Hz.

关键词: solution-processed ScInO, ambipolar, transistor, inverter

Abstract: This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor (CMOS)-like inverters. Pentacene is employed as a p-type organic semiconductor for its stable electrical performance, while the solution-processed scandium (Sc) substituted indium oxide (ScInO) is employed as an n-type inorganic semiconductor. It is observed that by regulating the doping concentration of Sc, the electrical performance of the n-type semiconductor could be well controlled to obtain a balance with the electrical performance of the p-type semiconductor, which is vital for achieving high-performance inverters. When the doping concentration of Sc is 10 at.%, the CMOS-like logic inverters exhibit a voltage gain larger than 80 and a wide noise margin (53% of the theoretical value). The inverters also respond well to the input signal with frequency up to 500 Hz.

Key words: solution-processed ScInO, ambipolar, transistor, inverter

中图分类号:  (Bipolar transistors)

  • 85.30.Pq
61.82.Fk (Semiconductors) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)