Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

doi:10.1088/1674-1056/ab7809

中国物理B ›› 2020, Vol. 29 ›› Issue (4): 47304-047304.doi: 10.1088/1674-1056/ab7809

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Yi-Lin Chen(陈怡霖), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Mei Wu(武玫), Ling Yang(杨凌), Yue Hao(郝跃)

School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, China, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China

收稿日期:2020-02-07 修回日期:2020-02-14 出版日期:2020-04-05 发布日期:2020-04-05
通讯作者: Xiao-Hua Ma E-mail:xhma@xidian.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB1802100), the Science Challenge Project, China (Grant No. TZ2018004), and the National Natural Science Foundation of China (Grant Nos. 61534007 and 11690042).

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Qing Zhu(朱青)^1,2, Xiao-Hua Ma(马晓华)², Yi-Lin Chen(陈怡霖)^1,2, Bin Hou(侯斌)², Jie-Jie Zhu(祝杰杰)^1,2, Meng Zhang(张濛)², Mei Wu(武玫)², Ling Yang(杨凌)^1,2, Yue Hao(郝跃)²

School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, China, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China

Received:2020-02-07 Revised:2020-02-14 Online:2020-04-05 Published:2020-04-05
Contact: Xiao-Hua Ma E-mail:xhma@xidian.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB1802100), the Science Challenge Project, China (Grant No. TZ2018004), and the National Natural Science Foundation of China (Grant Nos. 61534007 and 11690042).

摘要/Abstract

摘要： We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate dielectric under different negative gate stresses. The complex non-monotonic evolution of threshold voltage under the negative stress and during the recovery process is induced by the combination effect of two mechanisms. The effect of trapping behavior of interface state at SiN/AlGaN interface and the effect of zener traps in AlGaN barrier layer on the threshold voltage instability are opposite to each other. The threshold voltage shifts negatively under the negative stress due to the detrapping of the electrons at SiN/AlGaN interface, and shifts positively due to zener trapping in AlGaN barrier layer. As the stress is removed, the threshold voltage shifts positively for the retrapping of interface states and negatively for the thermal detrapping in AlGaN. However, it is the trapping behavior in the AlGaN rather than the interface state that results in the change of transconductance in the D-mode MIS-HEMT.

关键词: threshold voltage instability, interface state, zener trap, MIS-HEMT

Abstract: We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate dielectric under different negative gate stresses. The complex non-monotonic evolution of threshold voltage under the negative stress and during the recovery process is induced by the combination effect of two mechanisms. The effect of trapping behavior of interface state at SiN/AlGaN interface and the effect of zener traps in AlGaN barrier layer on the threshold voltage instability are opposite to each other. The threshold voltage shifts negatively under the negative stress due to the detrapping of the electrons at SiN/AlGaN interface, and shifts positively due to zener trapping in AlGaN barrier layer. As the stress is removed, the threshold voltage shifts positively for the retrapping of interface states and negatively for the thermal detrapping in AlGaN. However, it is the trapping behavior in the AlGaN rather than the interface state that results in the change of transconductance in the D-mode MIS-HEMT.

Key words: threshold voltage instability, interface state, zener trap, MIS-HEMT

中图分类号: (III-V semiconductors)

73.61.Ey

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths) 73.20.-r (Electron states at surfaces and interfaces)

朱青, 马晓华, 陈怡霖, 侯斌, 祝杰杰, 张濛, 武玫, 杨凌, 郝跃. Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs[J]. 中国物理B, 2020, 29(4): 47304-047304.

Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Yi-Lin Chen(陈怡霖), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Mei Wu(武玫), Ling Yang(杨凌), Yue Hao(郝跃). Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs[J]. Chin. Phys. B, 2020, 29(4): 47304-047304.

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Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

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