Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs
朱青, 马晓华, 陈怡霖, 侯斌, 祝杰杰, 张濛, 武玫, 杨凌, 郝跃
Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs
Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Yi-Lin Chen(陈怡霖), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Mei Wu(武玫), Ling Yang(杨凌), Yue Hao(郝跃)
中国物理B
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2020, (4): 47304
-047304
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DOI: 10.1088/1674-1056/ab7809