Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell

doi:10.1088/1674-1056/26/4/048104

中国物理B ›› 2017, Vol. 26 ›› Issue (4): 48104-048104.doi: 10.1088/1674-1056/26/4/048104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell

You-Peng Xiao(肖友鹏), Xiu-Qin Wei(魏秀琴), Lang Zhou(周浪)

Institute of Photovoltaic/School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China

收稿日期:2016-10-27 修回日期:2016-12-12 出版日期:2017-04-05 发布日期:2017-04-05
通讯作者: Lang Zhou E-mail:lzhou@ncu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51361022 and 61574072) and the Postdoctoral Science Foundation of Jiangxi Province, China (Grant No. 2015KY12).

Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell

You-Peng Xiao(肖友鹏), Xiu-Qin Wei(魏秀琴), Lang Zhou(周浪)

Institute of Photovoltaic/School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China

Received:2016-10-27 Revised:2016-12-12 Online:2017-04-05 Published:2017-04-05
Contact: Lang Zhou E-mail:lzhou@ncu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51361022 and 61574072) and the Postdoctoral Science Foundation of Jiangxi Province, China (Grant No. 2015KY12).

摘要/Abstract

摘要： Intrinsic hydrogenated amorphous silicon (a-Si:H) film is deposited on n-type crystalline silicon (c-Si) wafer by hot-wire chemical vapor deposition (HWCVD) to analyze the amorphous/crystalline heterointerface passivation properties. The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system, and a simple method of determining the interface state density (D_it) from lifetime measurement is proposed. The interface state density (D_it) measurement is also performed by using deep-level transient spectroscopy (DLTS) to prove the validity of the simple method. The microstructures and hydrogen bonding configurations of a-Si:H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry (SE) and Fourier transform infrared spectroscopy (FTIR) respectively. Lower values of interface state density (D_it) are obtained by using a-Si:H film with more uniform, compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.

关键词: amorphous silicon, microstructure, hydrogen bonding configurations, interface state density

Abstract: Intrinsic hydrogenated amorphous silicon (a-Si:H) film is deposited on n-type crystalline silicon (c-Si) wafer by hot-wire chemical vapor deposition (HWCVD) to analyze the amorphous/crystalline heterointerface passivation properties. The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system, and a simple method of determining the interface state density (D_it) from lifetime measurement is proposed. The interface state density (D_it) measurement is also performed by using deep-level transient spectroscopy (DLTS) to prove the validity of the simple method. The microstructures and hydrogen bonding configurations of a-Si:H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry (SE) and Fourier transform infrared spectroscopy (FTIR) respectively. Lower values of interface state density (D_it) are obtained by using a-Si:H film with more uniform, compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.

Key words: amorphous silicon, microstructure, hydrogen bonding configurations, interface state density

中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

81.15.Gh

88.40.jj (Silicon solar cells) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

肖友鹏, 魏秀琴, 周浪. Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell[J]. 中国物理B, 2017, 26(4): 48104-048104.

You-Peng Xiao(肖友鹏), Xiu-Qin Wei(魏秀琴), Lang Zhou(周浪). Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell[J]. Chin. Phys. B, 2017, 26(4): 48104-048104.

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Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell

Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell

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