Hunting down the ohmic contact of organic field-effect transistor

doi:10.1088/1674-1056/ab44a1

中国物理B ›› 2019, Vol. 28 ›› Issue (11): 118501-118501.doi: 10.1088/1674-1056/ab44a1

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Hunting down the ohmic contact of organic field-effect transistor

M Micjan, M Novota, P Telek, M Donoval, M Weis

Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 81219, Slovakia

收稿日期:2019-07-10 修回日期:2019-08-29 出版日期:2019-11-05 发布日期:2019-11-05
通讯作者: M Weis E-mail:martin.weis@stuba.sk
基金资助:
Project supported by the Slovak Research and Development Agency (Grant Nos. APVV-17-0501 and APVV-17-0522) and the Slovak Grant Agency for Science (Grants No. 1/0776/15).

Hunting down the ohmic contact of organic field-effect transistor

M Micjan, M Novota, P Telek, M Donoval, M Weis

Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 81219, Slovakia

Received:2019-07-10 Revised:2019-08-29 Online:2019-11-05 Published:2019-11-05
Contact: M Weis E-mail:martin.weis@stuba.sk
Supported by:
Project supported by the Slovak Research and Development Agency (Grant Nos. APVV-17-0501 and APVV-17-0522) and the Slovak Grant Agency for Science (Grants No. 1/0776/15).

摘要/Abstract

摘要： We report properties of contact resistances observed on pentacene organic field-effect transistors (OFET) with four different source/drain electrodes, namely, copper (Cu), gold (Au), silver (Ag), and germanium (Ge). The metals were selected to provide a wide range of energy barriers for charge injection, from blocking contact to smooth injection. All OFETs exhibited strong voltage dependence of the contact resistance, even for devices with smooth injection, which is in strong disagreement with the definition of ohmic contacts. A comparison with current crowding, resistive network, Fowler-Nordheim tunneling, and electric field enhanced thermionic injection (Schottky emission) pointed to importance of local electric fields and/or electrostatic field charges.

关键词: organic field-effect transistors, contact resistance, charge injection

Abstract: We report properties of contact resistances observed on pentacene organic field-effect transistors (OFET) with four different source/drain electrodes, namely, copper (Cu), gold (Au), silver (Ag), and germanium (Ge). The metals were selected to provide a wide range of energy barriers for charge injection, from blocking contact to smooth injection. All OFETs exhibited strong voltage dependence of the contact resistance, even for devices with smooth injection, which is in strong disagreement with the definition of ohmic contacts. A comparison with current crowding, resistive network, Fowler-Nordheim tunneling, and electric field enhanced thermionic injection (Schottky emission) pointed to importance of local electric fields and/or electrostatic field charges.

Key words: organic field-effect transistors, contact resistance, charge injection

中图分类号: (Semiconductor devices)

85.30.-z

73.40.Cg (Contact resistance, contact potential) 73.61.Ph (Polymers; organic compounds)

M Micjan, M Novota, P Telek, M Donoval, M Weis. Hunting down the ohmic contact of organic field-effect transistor[J]. 中国物理B, 2019, 28(11): 118501-118501.

M Micjan, M Novota, P Telek, M Donoval, M Weis. Hunting down the ohmic contact of organic field-effect transistor[J]. Chin. Phys. B, 2019, 28(11): 118501-118501.

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Hunting down the ohmic contact of organic field-effect transistor

Hunting down the ohmic contact of organic field-effect transistor

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