中国物理B ›› 2006, Vol. 15 ›› Issue (9): 2142-2145.doi: 10.1088/1009-1963/15/9/039
郭辉, 张义门, 张玉明
Guo Hui(郭辉)†, Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明)
摘要: The Ti--Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P+ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance \rho c as low as 8.64×10-6\Omega\cdot cm2 is achieved after annealing in N2 at 900℃ for 5\,min. The sheet resistance Rsh of the implanted layers is 975\Omega/\sqcap\!\!\!\!\sqcup. X-ray diffraction (XRD) analysis shows the formation of Ti-3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.
中图分类号: (Semiconductor lasers; laser diodes)