中国物理B ›› 2006, Vol. 15 ›› Issue (9): 2142-2145.doi: 10.1088/1009-1963/15/9/039

• • 上一篇    下一篇

Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation

郭辉, 张义门, 张玉明   

  1. Microelectronic School, Xidian University, Xi'an 710071, China, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • 收稿日期:2006-04-11 修回日期:2006-06-02 出版日期:2006-09-20 发布日期:2006-09-20
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No 2002CB311904), the National Defense\linebreak \makebox[1.6mm]{}Basic Research Program of China (Grant No 51327010101) and the National Natural Science Foundation of China (Grant No\linebreak \makebox[1.6mm]{}60376001).

Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation

Guo Hui(郭辉)†, Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明)   

  1. Microelectronic School, Xidian University, Xi'an 710071, China, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • Received:2006-04-11 Revised:2006-06-02 Online:2006-09-20 Published:2006-09-20
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No 2002CB311904), the National Defense\linebreak \makebox[1.6mm]{}Basic Research Program of China (Grant No 51327010101) and the National Natural Science Foundation of China (Grant No\linebreak \makebox[1.6mm]{}60376001).

PDF (PC)

726

赞

摘要： The Ti--Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P+ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance \rho c as low as 8.64×10-6\Omega\cdot cm2 is achieved after annealing in N2 at 900℃ for 5\,min. The sheet resistance Rsh of the implanted layers is 975\Omega/\sqcap\!\!\!\!\sqcup. X-ray diffraction (XRD) analysis shows the formation of Ti-3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.

关键词: ohmic contact, silicon carbide, specific contact resistance, P+ ion implantation

Abstract: The Ti--Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P+ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance $\rho$c as low as 8.64×10-6$\Omega\cdot$ cm2 is achieved after annealing in N2 at 900℃ for 5 min. The sheet resistance Rsh of the implanted layers is 975$\Omega/\Box$. X-ray diffraction (XRD) analysis shows the formation of Ti-3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.

Key words: ohmic contact, silicon carbide, specific contact resistance, P+ ion implantation

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.Mi (Dynamical laser instabilities; noisy laser behavior) 42.79.Sz (Optical communication systems, multiplexers, and demultiplexers?) 42.81.Dp (Propagation, scattering, and losses; solitons) 42.50.Lc (Quantum fluctuations, quantum noise, and quantum jumps) 42.60.Fc (Modulation, tuning, and mode locking)