[38] |
Liu Y, Chen R S, Li B, En Y F and Chen Y Q 2018 IEEE Trans. Electron. Dev. 65 356
doi: 10.1109/TED.2017.2775222
|
[1] |
Maiolo L, Pecora A, Maita F, Minotti A, Zampetti E, Pantalei S, Macagnano A, Bearzotti A, Ricci D and Fortunato G 2013 Sen. Actuators B 179 114
doi: 10.1016/j.snb.2012.10.093
|
[2] |
Fortunato E, Barquinha P and Martins R 2012 Adv. Mater. 24 2945
doi: 10.1002/adma.201103228
|
[3] |
Ho C, Panagopoulos G and Roy K 2013 IEEE Trans. Electron. Dev. 60 288
doi: 10.1109/TED.2012.2228657
|
[4] |
Yan B, Yang J, Xia Z, Liu X, Du G, Han R, Kang J, Liao C C, Gan Z, Liao M, Wang J P and Wong W 2008 IEEE T. Nanotechnol. 7 418
doi: 10.1109/TNANO.2008.926343
|
[5] |
Zhou D, Wang M and Zhang S 2011 IEEE Trans. Electron. Dev. 58 3422
doi: 10.1109/TED.2011.2161635
|
[6] |
Tai Y H, Chiu H L and Chou L S 2013 J. Disp. Technol. 9 613
doi: 10.1109/JDT.2013.2257680
|
[7] |
Chang G W, Chang T C, Jhu J C, Tsai T M, Chang K C, Syu Y E, Tai Y H, Jian F Y and Hung Y C 2014 IEEE Trans. Electron. Dev. 61 2119
doi: 10.1109/TED.2014.2319105
|
[8] |
Son K S, Kim H S, Maeng W J, Lee K H, Kim T S, Park J S, Kwon J Y, Koo B and Lee S Y 2011 IEEE Electron. Dev. Lett. 32 164
doi: 10.1109/LED.2010.2093867
|
[9] |
Mishra R, Mitra S and Gauthier R 2008 IEEE Electron. Dev. Lett. 29 262
doi: 10.1109/LED.2007.915382
|
[10] |
Jo M, Chang M, Kim S, Jung S, Park J B, Lee J, Seong D J and Hwang H 2009 IEEE Electron. Dev. Lett. 30 1194
doi: 10.1109/LED.2009.2030772
|
[11] |
Zhou J, Wang M and Wong M 2011 IEEE Trans. Electron. Dev. 58 3034
doi: 10.1109/TED.2011.2158582
|
[12] |
Cho E N, Kang J H, Kim C E and Moon P 2011 IEEE Trans. Dev. Mater. Reliab. 11 112
doi: 10.1109/TDMR.2010.2096508
|
[13] |
Ma M W, Chen C Y, Wu W C, Su C J, Kao K H, Chao T S and Lei T F 2008 IEEE Trans. Electron. Dev. 55 1153
doi: 10.1109/TED.2008.919710
|
[14] |
Wang R S, Huang R, He Y D, Wang Z H, Jia G S, Kim W D, Park D G and Wang Y Y 2008 IEEE Electron. Dev. Lett. 29 242
doi: 10.1109/LED.2007.915289
|
[15] |
Xiong N, Xiao P, Li M, Xu H, Yao R H, Wen S S and Peng J B 2013 Appl. Phys. Lett. 102 242102
doi: 10.1063/1.4811416
|
[16] |
Hu H H, Jheng Y R, Wu Y C, Hung M F and Huang G W 2012 IEEE Electron. Dev. Lett. 33 1276
doi: 10.1109/LED.2012.2204430
|
[17] |
Pichon L, Boukhenoufa A, Cordier C and Cretu B 2007 IEEE Electron. Dev. Lett. 28 716
doi: 10.1109/LED.2007.900849
|
[18] |
Liu Y, He H Y, Chen R S, En Y F, Li B and Chen Y Q 2018 IEEE J. Electron Dev. Soc. 6 271
doi: 10.1109/JEDS.2018.2800049
|
[19] |
Liu Y, He H Y, Chen Y Y, Chen R, Wang L and Cai S T 2019 IEEE Trans. Electron Dev. 66 2192
doi: 10.1109/TED.2019.2902449
|
[20] |
Hu C F, Wang M X, Zhang B and Wong M 2009 IEEE Trans. Electron. Dev. 56 587
doi: 10.1109/TED.2009.2014428
|
[21] |
Chen C Y, Lee J W, Wang S D, Shieh, M S, Lee P H, Chen W C, Lin H Y, Yeh K L and Lei T F 2006 IEEE Trans. Electron. Dev. 53 2993
doi: 10.1109/TED.2006.885543
|
[22] |
Maeda S, Maegawa S, Ipposhi T, Nishimura H, Ichiki T, Mitsuhashi J, Ashida M, Muragishi T, Inou, Y and Nishimura T 1994 J. Appl. Phys. 76 8160
doi: 10.1063/1.358430
|
[23] |
Gleskova H and Wagner S 2001 IEEE Trans. Electron. Dev. 48 1667
doi: 10.1109/16.936588
|
[24] |
Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E and Paillet P 2008 IEEE Trans. Nucl. Sci. 55 1833
doi: 10.1109/TNS.2008.2001040
|
[25] |
Liu Y, Chen H B, Liu Y R, Wang X, En Y F, Li B and Lu Y D 2015 Chin. Phys. B 24 088503
doi: 10.1088/1674-1056/24/8/088503
|
[26] |
Doremus R H 1976 J. Phys. Chem. 80 1773
doi: 10.1021/j100557a006
|
[27] |
Yamamoto T, Uwasawa K and Mogami T 1999 IEEE Trans. Electron. Dev. 46 921
doi: 10.1109/16.760398
|
[28] |
Ristić G S, Pejović M M and Jakšić A B 2000 J. Appl. Phys. 87 3468
doi: 10.1063/1.372368
|
[29] |
Wang L, Liu Y, Geng K W, Chen Y Y and En Y F 2018 Chin. Phys. B 27 068504
doi: 10.1088/1674-1056/27/6/068504
|
[30] |
Hooge F N 1994 IEEE Trans. Electron. Dev. 41 1926
doi: 10.1109/16.333808
|
[31] |
McWhorter A L, Meyer J W and Strum P D 1957 Phys. Rev. 108 1642
|
[32] |
Ghibaudo G, Roux O 1991 Phys. Status Solidi A 124 571
doi: 10.1002/pssa.2211240225
|
[33] |
Dimitriadis C A, Kamarinos G and Brini J 2001 IEEE Electron. Dev. Lett. 22 381
doi: 10.1109/55.936350
|
[34] |
Wang M X and Wang M 2014 IEEE Trans. Electron Dev. 61 3258
doi: 10.1109/TED.2014.2336250
|
[35] |
Jomaah J and Balestra F 2004 Proc. Inst. Elect. Eng.-Circuits Devices Syst. 151 111
doi: 10.1049/ip-cds:20040109
|
[36] |
Ioannidis E G, Tsormpatzoglou A, Tassis D H, Dimitriadis C A, Templier F and Kamarinos G 2010 J. Appl. Phys. 108 106103
doi: 10.1063/1.3506527
|
[37] |
Liu Y, Cai S T, Han C Y, Chen Y Y, Wang L, Xiong X M and Chen R S 2019 IEEE J. Electron. Dev. Soc. 7 203
|
[38] |
Liu Y, Chen R S, Li B, En Y F and Chen Y Q 2018 IEEE Trans. Electron. Dev. 65 356
doi: 10.1109/TED.2017.2775222
|