中国物理B ›› 2012, Vol. 21 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/21/8/088503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)

刘玉荣a b, 黎沛涛c, 姚若河a b   

  1. a The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
    b Guangdong Provincial Key Laboratory of Short-range Wireless Detection and Communication, South China University of Technology, Guangzhou 510640, China;
    c Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China
  • 收稿日期:2011-11-28 修回日期:2012-04-27 出版日期:2012-07-01 发布日期:2012-07-01
  • 基金资助:
    Projected supported by the National Natural Science Foundation of China (Grant No. 61076113), the Natural Science Foundation of Guangdong Province, China (Grant No. 8451064101000257), and the Research Grants Council (RGC) of Hong Kong Special Administrative Region (HKSAR), China (Grant No. HKU 7133/07E).

High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)

Liu Yu-Rong (刘玉荣)a b, Lai Pei-Tao (黎沛涛)c, Yao Ruo-He (姚若河 )a b   

  1. a The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
    b Guangdong Provincial Key Laboratory of Short-range Wireless Detection and Communication, South China University of Technology, Guangzhou 510640, China;
    c Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China
  • Received:2011-11-28 Revised:2012-04-27 Online:2012-07-01 Published:2012-07-01
  • Contact: Liu Yu-Rong E-mail:phlyr@scut.edu.cn
  • Supported by:
    Projected supported by the National Natural Science Foundation of China (Grant No. 61076113), the Natural Science Foundation of Guangdong Province, China (Grant No. 8451064101000257), and the Research Grants Council (RGC) of Hong Kong Special Administrative Region (HKSAR), China (Grant No. HKU 7133/07E).

摘要: Polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are fabricated by spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7× 103 at an illumination intensity of 1200 lx, and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx. However, when the device is in the on-state operating mode, the photosensitivity is very low: only 1.88 at an illumination intensity of 1200 lx for a gate voltage of -20 V and a drain voltage of -20 V. The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.

关键词: semiconducting polymer, thin film transistor, photosensitivity, phototransistor

Abstract: Polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are fabricated by spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7× 103 at an illumination intensity of 1200 lx, and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx. However, when the device is in the on-state operating mode, the photosensitivity is very low: only 1.88 at an illumination intensity of 1200 lx for a gate voltage of -20 V and a drain voltage of -20 V. The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.

Key words: semiconducting polymer, thin film transistor, photosensitivity, phototransistor

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.60.Dw (Photodiodes; phototransistors; photoresistors) 73.61.Ph (Polymers; organic compounds)