中国物理B ›› 2012, Vol. 21 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/21/8/088503
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
刘玉荣a b, 黎沛涛c, 姚若河a b
Liu Yu-Rong (刘玉荣)a b, Lai Pei-Tao (黎沛涛)c, Yao Ruo-He (姚若河 )a b
摘要: Polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are fabricated by spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7× 103 at an illumination intensity of 1200 lx, and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx. However, when the device is in the on-state operating mode, the photosensitivity is very low: only 1.88 at an illumination intensity of 1200 lx for a gate voltage of -20 V and a drain voltage of -20 V. The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.
中图分类号: (Field effect devices)