Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

doi:10.1088/1674-1056/28/6/067302

中国物理B ›› 2019, Vol. 28 ›› Issue (6): 67302-067302.doi: 10.1088/1674-1056/28/6/067302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

Yan Liu(刘岩), Wei Chen(陈伟), Chaohui He(贺朝会), Chunlei Su(苏春垒), Chenhui Wang(王晨辉), Xiaoming Jin(金晓明), Junlin Li(李俊霖), Yuanyuan Xue(薛院院)

1 School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China;
2 State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(Northwest Institute of Nuclear Technology), Xi'an 710024, China

收稿日期:2019-01-01 修回日期:2019-03-25 出版日期:2019-06-05 发布日期:2019-06-05
通讯作者: Wei Chen E-mail:chenwei@nint.ac.cn

Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

Yan Liu(刘岩)^1,2, Wei Chen(陈伟)², Chaohui He(贺朝会)¹, Chunlei Su(苏春垒)², Chenhui Wang(王晨辉)², Xiaoming Jin(金晓明)², Junlin Li(李俊霖)², Yuanyuan Xue(薛院院)²

1 School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China;
2 State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(Northwest Institute of Nuclear Technology), Xi'an 710024, China

Received:2019-01-01 Revised:2019-03-25 Online:2019-06-05 Published:2019-06-05
Contact: Wei Chen E-mail:chenwei@nint.ac.cn

摘要/Abstract

摘要：

Displacement damage induced by neutron irradiation in China Spallation Neutron Source (CSNS) is studied on bipolar transistors with lateral PNP, substrate PNP, and vertical NPN configurations, respectively. Comparison of the effects on different type transistors is conducted based on displacement damage factor, and the differences are analyzed through minority carrier lifetime calculation and structure analysis. The influence of CSNS neutrons irradiation on the lateral PNP transistors is analyzed by the gate-controlled method, including the oxide charge accumulation, surface recombine velocity, and minority carrier lifetime. The results indicate that the total ionizing dose in CSNS neutron radiation environment is negligible in this study. The displacement damage factors based on 1-MeV equivalent neutron flux of different transistors are consistent between Xi'an pulse reactor (XAPR) and CSNS.

关键词: displacement damage, China Spallation Neutron Source (CSNS), reactor neutrons, bipolar transistors

Abstract:

Key words: displacement damage, China Spallation Neutron Source (CSNS), reactor neutrons, bipolar transistors

中图分类号: (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Lq

85.30.Pq (Bipolar transistors) 85.30.De (Semiconductor-device characterization, design, and modeling) 29.25.Dz (Neutron sources)

刘岩, 陈伟, 贺朝会, 苏春垒, 王晨辉, 金晓明, 李俊霖, 薛院院. Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons[J]. 中国物理B, 2019, 28(6): 67302-067302.

Yan Liu(刘岩), Wei Chen(陈伟), Chaohui He(贺朝会), Chunlei Su(苏春垒), Chenhui Wang(王晨辉), Xiaoming Jin(金晓明), Junlin Li(李俊霖), Yuanyuan Xue(薛院院). Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons[J]. Chin. Phys. B, 2019, 28(6): 67302-067302.

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Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons

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