Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

doi:10.1088/1674-1056/21/5/058501

中国物理B ›› 2012, Vol. 21 ›› Issue (5): 58501-058501.doi: 10.1088/1674-1056/21/5/058501

Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

葛霁,刘洪刚,苏永波,曹玉雄,金智

Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2011-10-06 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2010CB327502).

Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

Ge Ji(葛霁)^†, Liu Hong-Gang(刘洪刚), Su Yong-Bo(苏永波), Cao Yu-Xiong(曹玉雄), and Jin Zhi(金智)

Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2011-10-06 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2010CB327502).

摘要/Abstract

摘要： A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors (DHBTs) based on hydrodynamic simulation is developed. The model is based on the hydrodynamic equation, which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector. In addition, the model accounts for several physical effects such as bandgap narrowing, variable effective mass, and doping-dependent mobility at high fields. Good agreement between the measured and simulated values of cutoff frequency, f_t, and maximum oscillation frequency, f_max, are achieved for lateral and vertical device scalings. It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.

关键词: InGaAs/InP double heterojunction bipolar transistors, hydrodynamic simulation, lateral and vertical scalable model

Abstract: A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors (DHBTs) based on hydrodynamic simulation is developed. The model is based on the hydrodynamic equation, which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector. In addition, the model accounts for several physical effects such as bandgap narrowing, variable effective mass, and doping-dependent mobility at high fields. Good agreement between the measured and simulated values of cutoff frequency, f_t, and maximum oscillation frequency, f_max, are achieved for lateral and vertical device scalings. It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.

Key words: InGaAs/InP double heterojunction bipolar transistors, hydrodynamic simulation, lateral and vertical scalable model

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 67.25.bf (Transport, hydrodynamics)

葛霁, 刘洪刚, 苏永波, 曹玉雄, 金智. Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors[J]. 中国物理B, 2012, 21(5): 58501-058501.

Ge Ji(葛霁), Liu Hong-Gang(刘洪刚), Su Yong-Bo(苏永波), Cao Yu-Xiong(曹玉雄), and Jin Zhi(金智) . Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors[J]. Chin. Phys. B, 2012, 21(5): 58501-058501.

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Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

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