中国物理B ›› 2011, Vol. 20 ›› Issue (1): 18502-018502.doi: 10.1088/1674-1056/20/1/018502
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
徐小波, 张鹤鸣, 胡辉勇, 马建立, 许立军
Xu Xiao-Bo(徐小波)†, Zhang He-Ming(张鹤鸣), Hu Hui-Yong(胡辉勇), Ma Jian-Li(马建立), and Xu Li-Jun(许立军)
摘要: The base--collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts. This paper proposes a novel analytical depletion capacitance model of this structure for the first time. A large discrepancy is predicted when the present model is compared with the conventional depletion model, and it is shown that the capacitance decreases with the increase of the reverse collector--base bias--and shows a kink as the reverse collector--base bias reaches the effective vertical punch-through voltage while the voltage differs with the collector doping concentrations, which is consistent with measurement results. The model can be employed for a fast evaluation of the depletion capacitance of an SOI SiGe HBT and has useful applications on the design and simulation of high performance SiGe circuits and devices.
中图分类号: (Bipolar transistors)