PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces

doi:10.1088/1674-1056/28/2/026801

中国物理B ›› 2019, Vol. 28 ›› Issue (2): 26801-026801.doi: 10.1088/1674-1056/28/2/026801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces

San-Jie Liu(刘三姐), Ying-Feng He(何荧峰), Hui-Yun Wei(卫会云), Peng Qiu(仇鹏), Yi-Meng Song(宋祎萌), Yun-Lai An(安运来), Abdul Rehman(阿布度-拉赫曼), Ming-Zeng Peng(彭铭曾), Xin-He Zheng(郑新和)

School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing(USTB), Beijing 100083, China

收稿日期:2017-11-03 修回日期:2018-11-29 出版日期:2019-02-05 发布日期:2019-02-05
通讯作者: Ming-Zeng Peng, Xin-He Zheng E-mail:mzpeng@ustb.edu.cn;xinhezheng@ustb.edu.cn
基金资助:
Project supported by the Fundamental Research Funds for the Central Universities (Grant Nos. FRF-BR-16-018A, FRF-TP-17-022A1, and FRF-TP-17-069A1), the National Natural Science Foundation of China (Grant Nos. 61274134 and 51402064), USTB Start-up Program (Grant No. 06105033), China Postdoctoral Science Foundation (Grant No. 2018M631333), Beijing Natural Science Foundation (Grant Nos. 2184112 and 4173077), Beijing Innovation and Research Base Fund (Grant No. Z161100005016095), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2015387).

PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces

School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing(USTB), Beijing 100083, China

Received:2017-11-03 Revised:2018-11-29 Online:2019-02-05 Published:2019-02-05
Contact: Ming-Zeng Peng, Xin-He Zheng E-mail:mzpeng@ustb.edu.cn;xinhezheng@ustb.edu.cn
Supported by:
Project supported by the Fundamental Research Funds for the Central Universities (Grant Nos. FRF-BR-16-018A, FRF-TP-17-022A1, and FRF-TP-17-069A1), the National Natural Science Foundation of China (Grant Nos. 61274134 and 51402064), USTB Start-up Program (Grant No. 06105033), China Postdoctoral Science Foundation (Grant No. 2018M631333), Beijing Natural Science Foundation (Grant Nos. 2184112 and 4173077), Beijing Innovation and Research Base Fund (Grant No. Z161100005016095), and the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2015387).

摘要/Abstract

摘要： Polycrystalline gallium nitride (GaN) thin films were deposited on Si (100) substrates via plasma-enhanced atomic layer deposition (PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si (100) interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si (100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy (HRTEM). However, an amorphous interfacial layer (~2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by x-ray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.

关键词: gallium nitride, PEALD, sharp interface, x-ray reflectivity, high resolution transmission electron microscopy

Abstract: Polycrystalline gallium nitride (GaN) thin films were deposited on Si (100) substrates via plasma-enhanced atomic layer deposition (PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si (100) interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si (100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy (HRTEM). However, an amorphous interfacial layer (~2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by x-ray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.

Key words: gallium nitride, PEALD, sharp interface, x-ray reflectivity, high resolution transmission electron microscopy

中图分类号: (Semiconductors)

68.35.bg

68.37.Og (High-resolution transmission electron microscopy (HRTEM)) 68.55.Nq (Composition and phase identification)

刘三姐, 何荧峰, 卫会云, 仇鹏, 宋祎萌, 安运来, 阿布度, 拉赫曼, 彭铭曾, 郑新和. PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces[J]. 中国物理B, 2019, 28(2): 26801-026801.

San-Jie Liu(刘三姐), Ying-Feng He(何荧峰), Hui-Yun Wei(卫会云), Peng Qiu(仇鹏), Yi-Meng Song(宋祎萌), Yun-Lai An(安运来), Abdul Rehman(阿布度-拉赫曼), Ming-Zeng Peng(彭铭曾), Xin-He Zheng(郑新和). PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces[J]. Chin. Phys. B, 2019, 28(2): 26801-026801.

参考文献 31

[1]	Walker D, Monroy E, Kung P, Wu J, Hamilton M, Sanchez F J, Diaz J and Razeghi M 1999 Appl. Phys. Lett. 74 762 doi: 10.1063/1.123303
[2]	Mishra U K, Parikh P and Wu Y F 2002 IEEE Proc. 90 1022 doi: 10.1109/JPROC.2002.1021567
[3]	Nakamura S, Senoh M and Mukai T 1993 Jpn. J. Appl. Phys. 32 L8
[4]	Nakamura S, Mukai T and Senoh M 1991 Jpn. J. Appl. Phys. 30 L1998
[5]	Ikeda N, Niiyama Y, Kambayashi H, Sato Y, Nomura T, Kato S and Yoshida S 2010 IEEE Proc. 98 1151 doi: 10.1109/JPROC.2009.2034397
[6]	Nakamura S and Krames M R 2013 IEEE Proc. 101 2211 doi: 10.1109/JPROC.2013.2274929
[7]	Hove M V, Boulay S, Bahl S R, Stoffels S, Kang X, Wellekens D, Geens K, Delabie A and Decoutere S 2012 IEEE Electron Dev. Lett. 33 667 doi: 10.1109/LED.2012.2188016
[8]	Nakamura S, Harada Y and Seno M 1991 Appl. Phys. Lett. 58 2021 doi: 10.1063/1.105239
[9]	Amano H, Sawaki N, Akasaki I and Toyoda Y 1986 Appl. Phys. Lett. 48 353 doi: 10.1063/1.96549
[10]	Lin M E, Sverdlov B, Zhou G L and Morkoç H 1993 Appl. Phys. Lett. 62 3479 doi: 10.1063/1.109026
[11]	Shih H Y, Lin M C, Chen L Y and Chen M J 2015 Nanotechnology 26 014002 doi: 10.1088/0957-4484/26/1/014002
[12]	Puurunen R L 2005 J. Appl. Phys. 97 121301 doi: 10.1063/1.1940727
[13]	Profijt H B, Potts S E, Van d S, M C M and Kessels W M M 2011 J. Vac. Sci. Technol. A 29 050801
[14]	Leskelä M and Ritala M 2002 Thin Solid Films 409 138 doi: 10.1016/S0040-6090(02)00117-7
[15]	George S M 2010 Chem. Rev. 110 111 doi: 10.1021/cr900056b
[16]	Tekcan B, Biyikli N and Okyay A K 2014 Opt. Eng. 53 107106 doi: 10.1117/1.OE.53.10.107106
[17]	Ozgitakgun C, Goldenberg E, Okyay A and Biyikli N 2014 J. Mater. Chem. C 2 2123 doi: 10.1039/C3TC32418D
[18]	Ozgit C, Donmez I, Alevli M and Biyikli N 2012 J. Vac. Sci. Technol. A 30 01A124
[19]	Kizir S, Haider A and Biyikli N 2016 J. Vac. Sci. Technol. A 34 041511 doi: 10.1116/1.4953463
[20]	Bolat S, Ozgit-Akgun C, Tekcan B and Biyikli N 2014 Appl. Phys. Lett. 104 243505 doi: 10.1063/1.4884061
[21]	Alevli M, Haider A, Kizir S, Leghari S A and Biyikli N 2016 J. Vac. Sci. Technol. A 34 01A137
[22]	Alevli M, Gungor N, Haider A, Kizir S, Leghari S A and Biyikli N 2016 J. Vac. Sci. Technol. A 34 01A125
[23]	Motamedi P and Cadien K 2015 Rsc Adv. 5 57865 doi: 10.1039/C5RA07709E
[24]	Motamedi P, Dalili N and Cadien K C 2015 J. Mater. Chem. C 3 7428 doi: 10.1039/C5TC01556A
[25]	Zhu D, Wallis D and Humphreys C 2013 Rep. Prog. Phys. 76 106501 doi: 10.1088/0034-4885/76/10/106501
[26]	Liu S, Peng M, Hou C, He Y, Li M and Zheng X 2017 Nanoscale Res. Lett. 12 279 doi: 10.1186/s11671-017-2049-1
[27]	Miikkulainen V, Leskelä M, Ritala M and Puurunen R L 2013 J. Appl. Phys. 44 021301
[28]	Eddy C R Jr, Nepal N, Hite J K and Mastro M A 2013 J. Vac. Sci. Technol. A 31 058501 doi: 10.1116/1.4813687
[29]	Kushvaha S, Kumar M S, Shukla A, Yadav B, Singh D K, Jewariya M, Ragam S and Maurya K 2015 Rsc Adv. 5 87818 doi: 10.1039/C5RA11361J
[30]	Surdu-Bob C, Saied S and Sullivan J 2001 Appl. Surf. Sci. 183 126 doi: 10.1016/S0169-4332(01)00583-9
[31]	Gungor N and Alevli M 2018 J. Vac. Sci. Technol. A 36 021514 doi: 10.1116/1.5003154

PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces

PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 31

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Yuefei Cai(蔡月飞), Jie Bai(白洁), and Tao Wang(王涛). Review of a direct epitaxial approach to achieving micro-LEDs[J]. 中国物理B, 2023, 32(1): 18508-018508.
[2]	Qiu-Ling Qiu(丘秋凌), Shi-Xu Yang(杨世旭), Qian-Shu Wu(吴千树), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Jin-Wei Zhang(张津玮), Zhen-Xing Liu(刘振兴), Yuan-Tao Zhang(张源涛), and Yang Liu(刘扬). Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction[J]. 中国物理B, 2022, 31(4): 47103-047103.
[3]	Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华). Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors[J]. 中国物理B, 2022, 31(3): 36103-036103.
[4]	Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing[J]. 中国物理B, 2021, 30(9): 97302-097302.
[5]	阙陶陶, 赵亚文, 李柳暗, 何亮, 丘秋凌, 刘振兴, 张津玮, 陈佳, 吴志盛, 刘扬. Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric[J]. 中国物理B, 2020, 29(3): 37201-037201.
[6]	吉雪, 董文秀, 张育民, 王建峰, 徐科. Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates[J]. 中国物理B, 2019, 28(6): 67701-067701.
[7]	田志锋, 徐鹏, 余耀, 孙建东, 冯伟, 丁青峰, 孟占伟, 李想, 蔡金华, 郑中信, 李欣幸, 靳琳, 秦华, 孙云飞. Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures[J]. 中国物理B, 2019, 28(5): 58501-058501.
[8]	侯明辰, 谢刚, 盛况. Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing[J]. 中国物理B, 2019, 28(3): 37302-037302.
[9]	程立文, 马剑, 曹常锐, 徐作政, 兰天, 杨金彭, 陈海涛, 于洪岩, 吴曙东, 尧舜, 曾祥华, 徐仔全. Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers[J]. 中国物理B, 2018, 27(8): 88504-088504.
[10]	吴洁君, 王昆, 于彤军, 张国义. GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges[J]. 中国物理B, 2015, 24(6): 68106-068106.
[11]	赵云, 王钢, 杨怀超, 安铁雷, 陈闽江, 余芳, 陶立, 羊建坤, 魏同波, 段瑞飞, 孙连峰. Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst[J]. 中国物理B, 2014, 23(9): 96802-096802.
[12]	冯倩, 杜锴, 李宇坤, 时鹏, 冯庆. Effect of annealing on performance of PEDOT：PSS/n-GaN Schottky solar cells[J]. , 2014, 23(7): 77303-077303.
[13]	冯倩, 时鹏, 李宇坤, 杜锴, 王强, 冯庆, 郝跃. Hybrid solar cell based on polythiophene and GaN nanoparticles composite[J]. 中国物理B, 2014, 23(2): 28802-028802.
[14]	汤岑, 谢刚, 张丽, 郭清, 汪涛, 盛况. Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes[J]. 中国物理B, 2013, 22(10): 106107-106107.
[15]	王晓晖, 石峰, 郭晖, 胡仓陆, 程宏昌, 常本康, 任玲, 杜玉杰, 张俊举 . The optimal thickness of transmission-mode GaN photocathode[J]. 中国物理B, 2012, 21(8): 87901-087901.