中国物理B ›› 2019, Vol. 28 ›› Issue (1): 18102-018102.doi: 10.1088/1674-1056/28/1/018102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)   

  1. 1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2. China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
    3. School of Aerospace Science and Technology, Xidian University, Xi'an 710071, China
  • 收稿日期:2018-08-25 修回日期:2018-10-22 发布日期:2019-01-25
  • 通讯作者: Ya-Chao Zhang E-mail:xd_zhangyachao@163.com
  • 基金资助:

    Project supported by the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201700184) and the National Key Research and Development Program of China (Grant Nos. 2016YFB0400105 and 2017YFB0403102).

High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition

Ya-Chao Zhang(张雅超)1, Zhi-Zhe Wang(王之哲)2, Rui Guo(郭蕊)1, Ge Liu(刘鸽)1, Wei-Min Bao(包为民)3, Jin-Cheng Zhang(张进成)1, Yue Hao(郝跃)1   

  1. 1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2. China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
    3. School of Aerospace Science and Technology, Xidian University, Xi'an 710071, China
  • Received:2018-08-25 Revised:2018-10-22 Published:2019-01-25
  • Contact: Ya-Chao Zhang E-mail:xd_zhangyachao@163.com
  • About author:73.40.Kp; 81.05.Ea; 85.30.De
  • Supported by:

    Project supported by the National Postdoctoral Program for Innovative Talents, China (Grant No. BX201700184) and the National Key Research and Development Program of China (Grant Nos. 2016YFB0400105 and 2017YFB0403102).

摘要:

Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures. A relatively low sheet carrier density of 1.8×1012 cm-2, together with a high electron mobility of 1229.5 cm2/V·s, was obtained for the prepared heterostructures. The surface morphology of the heterostructures was also significantly improved, i.e., with a root mean square roughness of 0.29 nm in a 2 μm×2 μm scan area. In addition to the improved properties, the enhancement-mode metal–oxide–semiconductor high electron mobility transistors (MOSHEMTs) processed on the heterostructures not only exhibited a high threshold voltage (VTH) of 3.1 V, but also demonstrated a significantly enhanced drain output current density of 669 mA/mm. These values probably represent the largest values obtained from the InAlGaN based enhancement-mode devices to the best of our knowledge. This study strongly indicates that the InAlGaN/GaN heterostructures grown by pulsed metal organic chemical vapor deposition could be promising for the applications of novel nitride-based electronic devices.

关键词: InAlGaN, enhancement-mode, metal-oxide-semiconductor high electron mobility transistor, threshold voltage

Abstract:

Pulsed metal organic chemical vapor deposition was employed to grow nearly polarization matched InAlGaN/GaN heterostructures. A relatively low sheet carrier density of 1.8×1012 cm-2, together with a high electron mobility of 1229.5 cm2/V·s, was obtained for the prepared heterostructures. The surface morphology of the heterostructures was also significantly improved, i.e., with a root mean square roughness of 0.29 nm in a 2 μm×2 μm scan area. In addition to the improved properties, the enhancement-mode metal–oxide–semiconductor high electron mobility transistors (MOSHEMTs) processed on the heterostructures not only exhibited a high threshold voltage (VTH) of 3.1 V, but also demonstrated a significantly enhanced drain output current density of 669 mA/mm. These values probably represent the largest values obtained from the InAlGaN based enhancement-mode devices to the best of our knowledge. This study strongly indicates that the InAlGaN/GaN heterostructures grown by pulsed metal organic chemical vapor deposition could be promising for the applications of novel nitride-based electronic devices.

Key words: InAlGaN, enhancement-mode, metal-oxide-semiconductor high electron mobility transistor, threshold voltage

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
81.05.Ea (III-V semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling)