High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition
张雅超, 王之哲, 郭蕊, 刘鸽, 包为民, 张进成, 郝跃
High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition
Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
中国物理B
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2019, (1): 18102
-018102
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DOI: 10.1088/1674-1056/28/1/018102