Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

doi:10.1088/1674-1056/26/1/017304

中国物理B ›› 2017, Vol. 26 ›› Issue (1): 17304-017304.doi: 10.1088/1674-1056/26/1/017304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

Ling Yang(杨凌), Xiao-Wei Zhou(周小伟), Xiao-Hua Ma(马晓华), Ling Lv(吕玲), Yan-Rong Cao(曹艳荣), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)

1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi'an 710071, China;
2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3. School of Microelectronics, Xidian University, Xi'an 710071, China;
4. School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China

收稿日期:2016-07-25 修回日期:2016-10-17 出版日期:2017-01-05 发布日期:2017-01-05
通讯作者: Ling Yang E-mail:yangling@xidian.edu.cn
基金资助:
Projects supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61334002) and the National Natural Science Foundation of China (Grant Nos. 61604114, 61404097, and 61504099).

Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

Ling Yang(杨凌)^1,2, Xiao-Wei Zhou(周小伟)^1,2, Xiao-Hua Ma(马晓华)^1,2, Ling Lv(吕玲)^1,2, Yan-Rong Cao(曹艳荣)⁴, Jin-Cheng Zhang(张进成)^1,3, Yue Hao(郝跃)^1,3

1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi'an 710071, China;
2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3. School of Microelectronics, Xidian University, Xi'an 710071, China;
4. School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China

Received:2016-07-25 Revised:2016-10-17 Online:2017-01-05 Published:2017-01-05
Contact: Ling Yang E-mail:yangling@xidian.edu.cn
Supported by:
Projects supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61334002) and the National Natural Science Foundation of China (Grant Nos. 61604114, 61404097, and 61504099).

摘要/Abstract

摘要： The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor (HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties.

关键词: AlGaN/GaN HEMT, low plasma power, fluorine implant ion, early electrical reliability

Abstract: The new electrical degradation phenomenon of the AlGaN/GaN high electron mobility transistor (HEMT) treated by low power fluorine plasma is discovered. The saturated current, on-resistance, threshold voltage, gate leakage and breakdown voltage show that each experiences a significant change in a short time stress, and then keeps unchangeable. The migration phenomenon of fluorine ions is further validated by the electron redistribution and breakdown voltage enhancement after off-state stress. These results suggest that the low power fluorine implant ion stays in an unstable state. It causes the electrical properties of AlGaN/GaN HEMT to present early degradation. A new migration and degradation mechanism of the low power fluorine implant ion under the off-stress electrical stress is proposed. The low power fluorine ions would drift at the beginning of the off-state stress, and then accumulate between gate and drain nearby the gate side. Due to the strong electronegativity of fluorine, the accumulation of the front fluorine ions would prevent the subsequent fluorine ions from drifting, thereby alleviating further the degradation of AlGaN/GaN HEMT electrical properties.

Key words: AlGaN/GaN HEMT, low plasma power, fluorine implant ion, early electrical reliability

中图分类号: (III-V semiconductors)

73.61.Ey

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

杨凌, 周小伟, 马晓华, 吕玲, 曹艳荣, 张进成, 郝跃. Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor[J]. 中国物理B, 2017, 26(1): 17304-017304.

Ling Yang(杨凌), Xiao-Wei Zhou(周小伟), Xiao-Hua Ma(马晓华), Ling Lv(吕玲), Yan-Rong Cao(曹艳荣), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor[J]. Chin. Phys. B, 2017, 26(1): 17304-017304.

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Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

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